相关论文: Galerkin Methods for Boltzmann-Poisson transport w…

In this paper we perform, by means of Discontinuous Galerkin (DG) Finite Element Method (FEM) based numerical solvers for Boltzmann-Poisson (BP) semiclassical models of hot electronic transport in semiconductors, a numerical study of…

In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term…

The work presented in this paper is related to the development of positivity preserving Discontinuous Galerkin (DG) methods for Boltzmann - Poisson (BP) computational models of electronic transport in semiconductors. We pose the Boltzmann…

This work is related to developing entropy-stable positivity-preserving Discontinuous Galerkin (DG) methods as a computational scheme for Boltzmann-Poisson systems modeling the probability density of collisional electronic transport along…

Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…

The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are obtained by the spherical averaging of…

The modeling and simulation of electromagnetic wave propagation is often accompanied by a restriction to bounded domains which requires the introduction of artificial boundaries. The corresponding boundary conditions should be chosen in…

Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin (DG) method-based framework is…

In this work we introduce the concept of characteristic boundary conditions (CBCs) within the framework of Hybridizable Discontinuous Galerkin (HDG) methods, including both the Navier-Stokes characteristic boundary conditions (NSCBCs) and a…

In this paper, we develop an asymptotic-preserving and positivity-preserving discontinuous Galerkin (DG) method for solving the semiconductor Boltzmann equation in the diffusive scaling. We first formulate the diffusive relaxation system…

A key property of the linear Boltzmann semiconductor model is that as the collision frequency tends to infinity, the phase space density $f = f(x,v,t)$ converges to an isotropic function $M(v)\rho(x,t)$, called the drift-diffusion limit,…

Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from…

The discontinuous Galerkin (DG) method is an established method for computing approximate solutions of partial differential equations in many applications. Unlike continuous finite elements, in DG methods, numerical fluxes are used to…

We report on a computational approach based on the self-consistent solution of the steady-state Boltzmann transport equation coupled with the Poisson equation for the study of inhomogeneous transport in deep submicron semiconductor…

We study uncertainty quantification for a Boltzmann-Poisson system that models electron transport in semiconductors and the physical collision mechanisms over the charges. We use the stochastic Galerkin method in order to handle the…

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…

In this paper, we develop a sparse grid discontinuous Galerkin (DG) scheme for transport equations and applied it to kinetic simulations. The method uses the weak formulations of traditional Runge-Kutta DG (RKDG) schemes for hyperbolic…

We study the Boltzmann equation in a smooth bounded domain featuring a mixed boundary condition. Specifically, gas particles experience specular reflection in two parallel plates, while diffusive reflection occurs in the remaining portion…

In an electrostatic simulation, an equipotential condition with an undefined/floating potential value has to be enforced on the surface of an isolated conductor. If this conductor is charged, a nonzero charge condition is also required.…

Incorporation of plasmonic nanostructures in the design of photoconductive devices (PCDs) has significantly improved their optical-to-terahertz conversion efficiency. However, this improvement comes at the cost of increased complexity for…