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Graphene was deposited on a transparent and flexible substrate and tensile strain up to ~0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant redshifts of 2D and G band (-27.8…

材料科学 · 物理学 2008-10-21 Zhen Hua Ni , Ting Yu , Yun Hao Lu , Ying Ying Wang , Yuan Ping Feng , Ze Xiang Shen

By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…

材料科学 · 物理学 2017-09-13 Hui-Juan Cui , Xian-Lei Sheng , Qing-Bo Yan , Qing-Rong Zheng , Gang Su

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…

介观与纳米尺度物理 · 物理学 2017-05-22 Manisha Chhikara , Iaroslav Gaponenko , Patrycja Paruch , Alexey. B. Kuzmenko

Thin membranes, such as monolayer graphene of monoatomic thickness, are bound to exhibit lateral buckling under uniaxial tensile loading that impairs its mechanical behaviour. In this work, we have developed an experimental device to…

We determine the band structure of graphene under strain using density functional calculations. The ab-initio band strucure is then used to extract the best fit to the tight-binding hopping parameters used in a recent microscopic model of…

介观与纳米尺度物理 · 物理学 2009-11-08 R. M. Ribeiro , Vitor M. Pereira , N. M. R. Peres , P. R. Briddon , A. H. Castro Neto

Within the tight binding approximation, we study the dependence of the electronic band structure and of the optical conductivity of a graphene single layer on the modulus and direction of applied uniaxial strain. While the Dirac cone…

介观与纳米尺度物理 · 物理学 2010-01-15 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate…

We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of the strain modulus and direction,…

介观与纳米尺度物理 · 物理学 2010-01-04 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we…

材料科学 · 物理学 2013-01-11 Jiangtao Wu , Xinghua Shi , Yujie Wei

The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…

介观与纳米尺度物理 · 物理学 2010-01-20 Yang Lu , Jing Guo

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

介观与纳米尺度物理 · 物理学 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

Flexoelectricity phenomenon is the response of electric polarization to an applied strain gradient and is developed as a consequence of crystal symmetry in all materials. In this study, we show that the presence of strain gradient in…

计算物理 · 物理学 2017-03-03 S. I. Kundalwal , S. A. Meguid , G. J. Weng

We study the 2D Raman band of in-plane uniaxially strained graphene within a non-orthogonal tight-binding model. At non-zero strain, the obtained 2D band splits into two subbands at strain angles $0^{\circ}$ and $30^{\circ}$ or into three…

介观与纳米尺度物理 · 物理学 2013-06-11 Valentin N. Popov , Philippe Lambin

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the…

介观与纳米尺度物理 · 物理学 2017-08-22 Gerardo G. Naumis , Salvador Barraza-Lopez , Maurice Oliva-Leyva , Humberto Terrones

We present an in-depth analysis of the electronic and vibrational band structure of uniaxially strained graphene by ab-initio calculations. Depending on the direction and amount of strain, the Fermi crossing moves away from the $K$-point.…

介观与纳米尺度物理 · 物理学 2016-09-08 Marcel Mohr , Konstantinos Papagelis , Janina Maultzsch , Christian Thomsen

We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the…

材料科学 · 物理学 2012-08-17 B. Verberck , B. Partoens , F. M. Peeters , B. Trauzettel

Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model,…

介观与纳米尺度物理 · 物理学 2010-10-13 S. Gattenloehner , W. Belzig , M. Titov

We report first-principles calculations on antiferromagnetic spin ordering in graphene under biaxial strain. Using hybrid functional calculations, we found that semimetallic graphene sheets undergo a transition to antiferromagnetic…

材料科学 · 物理学 2012-12-11 Sung-Hoon Lee , Sungjin Kim , Kinam Kim
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