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In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band…

Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary…

It is quite intriguing to investigate the transition from a topological insulator (TI) phase to topological crystalline insulator (TCI) phase in a material as the latter has an advantage over the former in controlled device applications.…

材料科学 · 物理学 2025-05-20 Ramesh Kumar , Mukhtiyar Singh

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a…

材料科学 · 物理学 2015-05-19 Hosub Jin , Jung-Hwan Song , Arthur J. Freeman , Mercouri G. Kanatzidis

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…

PdTe is a superconductor with Tc ~4.25 K. Recently, evidence for bulk-nodal and surface-nodeless gap features has been reported in PdTe [Yang et al., Phys. Rev. Lett. 130, 046402 (2023)]. Here, we investigate the physical properties of PdTe…

Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…

Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap…

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…

介观与纳米尺度物理 · 物理学 2018-10-10 Lauryn Wu , Kunming Gu , Qiliang Li

Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored observed experimentally in three-dimensional (3D) materials. However, the two-dimensional (2D) films are explored much less than 3D…

Lead chalcogenides are the promising thermoelectric (TE) materials having narrow band gap. The present work investigates the TE behaviour of PbSe in the temperature range 300-500 K. The transport properties of the sample have been studied…

In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…

材料科学 · 物理学 2026-05-14 Maciej Bazarnik , Thorsten Deilmann , Marta Przychodnia , Anika Schlenhoff

In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…

Despite considerable interest in layered transition metal dichalcogenides (TMDs), such as MX2 with M = (Mo, W) and X = (S, Se, Te), the physical origin of their topological nature is still poorly understood. In the conventional view of…

介观与纳米尺度物理 · 物理学 2016-03-07 Duk-Hyun Choe , Ha-Jun Sung , Kee Joo Chang

Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however…

The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is…

材料科学 · 物理学 2021-01-20 A. Łusakowski , P. Bogusławski , T. Story

We investigate the variation of the band gap across the Ruddlesden-Popper (RP) series (An+1BnX3n+1) in model chalcogenide, oxide, and halide materials to understand the factors influencing band gap evolution. In contrast to the oxides and…

材料科学 · 物理学 2019-10-30 Wei Li , Shanyuan Niu , Boyang Zhao , Ralf Haiges , Jayakanth Ravichandran , Anderson Janotti

We report an investigation of the superconducting order parameter of the noncentrosymmetric compound PbTaSe$_2$, which is believed to have a topologically nontrivial band structure. Precise measurements of the London penetration depth…

超导电性 · 物理学 2016-02-23 G. M. Pang , M. Smidman , L. X. Zhao , Y. F. Wang , Z. F. Weng , L. Q. Che , Y. Chen , X. Lu , G. F. Chen , H. Q. Yuan

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

We present theoretical and experimental results exploring a half-Heusler compound TmPdSb with unusual band order and metallic surface states. Typically, the half-Heusler systems exhibit topological features in a semimetallic state, and…

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