相关论文: Ge Microdisk with Lithographically-Tunable Strain …
We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…
Gigahertz acoustic resonators have the potential to advance data processing and quantum communication. However, they are expensive and lack responsiveness to external stimuli, limiting their use in sensing applications. In contrast,…
This paper presents a proof-of-concept demonstration of triaxial strain tomography from Bragg-edge neutron imaging within a three-dimensional sample. Bragg-edge neutron transmission can provide high-resolution images of the average through…
We report on experiments with M\"obius strip microlasers which were fabricated with high optical quality by direct laser writing. A M\"obius strip, i.e., a band with a half twist, exhibits the fascinating property that it has a single…
We present a study of the piezostrain-tunable gyrotropic dynamics in Co$_{40}$Fe$_{40}$B$_{20}$ vortex microstructures fabricated on a 0.7PMN-0.3PT single crystalline substrate. Using field-modulated spin rectification measurements, we…
Physical characteristics of Cu$_2$Te are poorly investigated due to limited Te sources available and unclear atomic positions of crystal structure. Herein, hexagonal Cu$_2$Te microdisks are successfully prepared via chemical vapor…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
We have addressed the existing ambiguity regarding the effect of process-induced strain in the underlying GaN layer on AlGaN/GaN heterostructure properties. The bandgaps and offsets for AlGaN on strained GaN are first computed using a cubic…
We propose a straightforward and effective approach to design, by strain-engineering, photonic topological insulators supporting high quality factors edge states. Chiral strain-engineering creates opposite synthetic gauge fields in two…
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due…
We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater…
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In$_{1-x}$Ga$_{x}$P. The intrinsic strain is a consequence of the epitaxial growth given by the lattice mismatch between…
Flux-pinning-induced stress and strain distributions in a thin disk superconductor in a perpendicular magnetic field is analyzed. We calculate the body forces, solve the magneto-elastic problem and derive formulas for all stress and strain…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
The modification of the nature and size of bandgaps for III-V semiconductors is of strong interest for optoelectronic applications. Strain can be used to systematically tune the bandgap over a wide range of values and induce…
The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched,…
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…
A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…