相关论文: Ge Microdisk with Lithographically-Tunable Strain …
We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and…
Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to…
Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…
The effect of biaxial strain on the superconducting properties of MgB2 thin films was studied by first-principles calculations. The stability analyses by phonon dispersions show that biaxial strain as much as 7% can be applied onto MgB2…
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for…
A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it…
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches…
Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…
The effect of tensile stress on magnetoimpedance (MI) in CoMnSiB amorphous wires at microwave frequencies (0.5-3 GHz) is investigated both experimentally and theoretically. In the presence of the dc bias magnetic field of the order of the…
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
Nanoscale tailoring of the optoelectronic response of 2D Transition Metal Dichalcogenides semiconductor layers (TMDs) has been achieved thanks to a novel strain engineering approach based on the grayscale thermal-Scanning Probe Lithography…
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…
In this research project we propose a new composite medium, which can visualise the mechanical stress at any stage: before and after damage. The main feature of the proposed stress-tuneable composite is its permittivity (dielectric…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
Digital image correlation of laser-ablated platinum nanoparticles on the surface of a polycrystalline metal (nickel-based superalloy Rene 88DT) was used to obtain the local strain behavior from an in situ scanning electron microscope…
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface…
Optical interconnects are the most promising solution to address the data-movement bottleneck in data centers. Silicon microdisks, benefiting from their compact footprint, low energy consumption, and wavelength division multiplexing (WDM)…