相关论文: Magnetoresistance of monolayer graphene with short…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
We consider longitudinal electronic transport in a graphene monolayer with an external in-plane magnetic field and with extrinsic spin-orbit Rashba interaction. Our main interest is in the in-plane magnetoresistance, observed…
We show that the type of charge carrier scattering significantly affects the high-field magnetoresistance of graphene nanoribbons. This effect has potential to be used in identifying the scattering mechanisms in graphene. The results also…
In spite of 40 years of experimental studies and several theoretical proposals, an overall interpretation of the complex behavior of the magnetoresistance (MR) of multilayer graphene, i.e. graphite, at high fields ($B \lesssim 70~$T) and in…
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values,…
We present magnetoresistance measurements on large scale monolayer graphene grown by chemical vapor deposition (CVD) on copper. The graphene layer was transferred onto SiO2/Si via PMMA and thermal release tape for transport measurements.…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
We report on (magneto)-transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 Tesla). Evidences of field-dependent electronic confinement features are given, and allow estimating the…
We have studied the magnetotransport of conical and disk-shaped nanocarbon particles in magnetic fields $\left|B\right|\leq9\:\mathrm{T}$ at temperatures $2\leq T\leq300\:\mathrm{K}$ to characterize electron scattering in a three…
We have performed magnetoresistance (MR) measurements of granular ferromagnets having lateral dimensions smaller than 0.5 $\mu$m and containing a small number of grains (down to about 100). Compared to macroscopic samples, these granular…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
The derived by us earlier electron scattering matrix for the short-range defects in monolayer graphene is applyed to description of the resistivity electron density dependence. It is argued that large charged defect density is unlikely in…
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of…
We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since…