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相关论文: Gas Sensing with h-BN Capped MoS2 Heterostructure …

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We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…

介观与纳米尺度物理 · 物理学 2015-06-23 R. Samnakay , C. Jiang , S. L. Rumyantsev , M. S. Shur , A. A. Balandin

We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high…

介观与纳米尺度物理 · 物理学 2021-02-11 Fan Ye , Qingchang Liu , Baoxing Xu , Philip X. -L. Feng , Xian Zhang

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly…

Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability…

State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used…

Dielectrics are insulating materials used in many different electronic devices and play an important role in all of them. Current advanced electronic devices use dielectric materials with a high dielectric constant and avoid high leakage…

应用物理 · 物理学 2019-05-17 Fei Hui

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…

Transition metal dichalcogenides have shown great promise in the field of gas sensing due to their high catalytic activity and unique electronic properties. They can effectively interact with various gas molecules, making them suitable…

应用物理 · 物理学 2024-09-11 Jemal Yimer Damte , Hassan Ataalite

We present a comprehensive theoretical investigation of gas sensing in monolayer hexagonal boron nitride (h-BN) based field-effect transistors (FET) using the non-equilibrium Green function formalism and Landauer-B\"{u}ttiker approach.…

介观与纳米尺度物理 · 物理学 2025-07-22 Saumen Acharjee

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS$_2$) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS$_2$ flakes are partially…

The measurement of acetone in human breath, a known biomarker for diabetes, can act as an effective screening method for diabetes. While gas chromatography and mass spectroscopy based methods can detect gases in low concentration, they are…

应用物理 · 物理学 2019-06-26 Sumant Sarkar , Alison Viegas , Srinivasa R. Raghavan

Hexagonal boron nitride (h-BN) is a key ingredient for various two-dimensional (2D) van der Waals heterostructure devices, but the exact role of h-BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear.…

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. In this work,…

Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first…

应用物理 · 物理学 2020-09-25 Sushovan Dhara , Himani Jawa , Sayantan Ghosh , Abin Varghese , Saurabh Lodha

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…

Metal oxide semiconductors have been thoroughly studied for gas sensing applications due to the electrical transduction phenomenon in the presence of gaseous analytes. The chemiresistive sensors prevalent in the applications have several…

仪器与探测器 · 物理学 2025-05-16 A. Shahid , J. Gum , S. Mokkapati , R. Unnithan

Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

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