相关论文: Gate-controlled semimetal-topological insulator tr…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently…
Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…
In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Studying the influence of breaking time-reversal symmetry on topological insulator surface states is an important problem of current interest in condensed matter physics and could provide a route toward proof-of-concept spintronic devices…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk…
By first-principles calculations, we find that Ba2X(X=Si, Ge) hosts a topological semimetal phase with one nodal ring in the kx=0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The…
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field.…
We have experimentally realized novel space-time inversion (P-T) invariant Z2-type topological semimetal-bands, via an analogy between the momentum space and a controllable parameter space in superconducting quantum circuits. By measuring…
In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus…
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers…
A low-temperature intervening metallic regime arising in the two-dimensional superconductor-insulator transition challenges our understanding of electronic fluids. Here we develop a gauge theory revealing that this emergent anomalous metal…
We show that electrons in ordinary III-V semiconductor double wells with an in-plane modulating periodic potential and inter well spin-orbit interaction are tunable Topological Insulators (TIs). Here the essential TI ingredients, namely,…
We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to…
We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau…