相关论文: Anomalous temperature dependence of photoelectron …
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…
The evolution of the electron spin dynamics as consequence of carrier delocalization in $n$-type GaAs is investigated by the recently developed extended pump-probe Kerr/Faraday rotation spectroscopy. We find that isolated electrons…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically…
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears in the…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We present an experimental investigation of band-gap shrinkage in n-type GaN using photoluminescence spectroscopy, as a function of electron concentration and temperature. The observed systematic shift of the band-to-band transition energy…
The dependence on temperature of the spin magnetization of a two-dimensional electron gas at filling factor unity is studied. Using classical Monte Carlo simulations we analyze the effect that the equivalence between topological and…
We present a qualitative model study of energy and temperature dependence of hot electron magnetotransport. This model calculations are based on a simple argument that the inelastic scattering strength of hot electrons is strongly spin and…
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created…
We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substrates. Analysis of the luminescence intensity spatial…
We study charge and spin transport in systems composed of itinerant electrons and localized magnetic moments of a Kitaev quantum spin liquid (QSL) phase. For example, $\alpha-{\rm RuCl}_3$ either intrinsically doped or in proximity to…
Using a theory which treats on equal footing transport of excited electrons and electron-phonon scattering, we are able to explain the temperature dependence of the relaxation time in Cu as recently observed by Petek, Nagano, and Ogawa. We…
The calculated electron mobility for a graphene nanoribbon as a function of applied electric field has been found to have a large threshold field for entering a nonlinear transport regime. This field depends on the lattice temperature,…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…