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We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked…

材料科学 · 物理学 2010-03-10 B. R. K. Nanda , S. Satpathy

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

介观与纳米尺度物理 · 物理学 2010-10-12 Thiti Taychatanapat , Pablo Jarillo-Herrero

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann

Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great…

介观与纳米尺度物理 · 物理学 2021-12-17 Jouda Jemaa Khabthani , Ahmed Missaoui , Didier Mayou , Guy Trambly de Laissardière

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

介观与纳米尺度物理 · 物理学 2015-05-30 X. Li , K. M. Borysenko , M. Buongiorno Nardelli , K. W. Kim

The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron…

介观与纳米尺度物理 · 物理学 2012-03-23 J. Velasco , L. Jing , W. Bao , Y. Lee , P. Kratz , V. Aji , M. Bockrath , C. N. Lau , C. Varma , R. Stillwell , D. Smirnov , Fan Zhang , J. Jung , A. H. MacDonald

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely…

Electronic and transport properties of bilayer heterostructure under light irradiation are of fundamental interest to improve functionality of optoelectronic devices. We theoretically study the modification of transport properties of…

介观与纳米尺度物理 · 物理学 2023-02-16 Pascal Stadler , Mikael Fogelström

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different…

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…

Bilayer graphene (BLG) has recently attracted a great deal of attention because of its electrically tunable energy gaps and its unusual electronic structure. In this Letter we present analytical and semi-analytical expressions, based on the…

强关联电子 · 物理学 2009-12-03 Giovanni Borghi , Marco Polini , Reza Asgari , A. H. MacDonald

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible…

One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correction, we systematically investigate for the first time the…

Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…

材料科学 · 物理学 2014-12-04 Ryo Nouchi

Effect of electric field on the band structures of graphene/BN and BN/BN bilayers is investigated within the framework of density functional theory. A relatively large degree of modulation is predicted for the graphene/BN bilayer. The…

材料科学 · 物理学 2015-05-30 Radhakrishnan Balu , Xiaoliang Zhong , Ravindra Pandey , Shashi P. Karna

In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with…

介观与纳米尺度物理 · 物理学 2012-01-23 W. Bao , L. Jing , Y. Lee , J. Velasco , P. Kratz , D. Tran , B. Standley , M. Aykol , S. B. Cronin , D. Smirnov , M. Koshino , E. McCann , M. Bockrath , C. N. Lau

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

材料科学 · 物理学 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of…

材料科学 · 物理学 2011-11-09 J. M. B. Lopes dos Santos , N. M. R. Peres , A. H. Castro Neto
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