相关论文: Transistor Switches using Active Piezoelectric Gat…

Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the…

Cooling electronic devices to cryogenic temperatures (< 77 K) is crucial in various scientific and engineering domains. Efficient cooling involves the removal of heat generated from these devices through thermal contact with either a liquid…

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…

We demonstrate that superconducting aluminium nano-bridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the…

Developing thermal analogues of field-effect transistor could open the door to a low-power and even zero-power communication technology working with heat rather than electricity. These solid-sate devices could also find many applications in…

The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance…

We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment. These…

We show that the arguments in the posting cond-mat/0607432 by Flatte and Hall are flawed and untenable. Their spin based transistor cannot work as claimed because of fundamental scientific barriers, which cannot be overcome now, or ever.…

Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…

The field trap effect on the microcavity surface under the action of an electric field is not conducive to boiling heat transfer. This numerical study found that using conducting-insulating microcavity surfaces in an electric field removes…

The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…

We study the electronic properties of a linear trans-polyacetylene (tPA) molecule capacitively coupled to an external gate voltage $V_g$ of width $d$. We describe this system using the Takayama-Lin-Liu-Maki (TLM) model in the continuum, and…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Transimpedance amplifiers (TIA) play a crucial role in various electronic systems, especially in optical signal acquisition. However, their performance is often hampered by saturation issues due to high input currents, leading to prolonged…

Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…

At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report…

The electronic circulator, and its close relative the gyrator, are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies.…

We study the tunneling phenomenon of a ladder system with a Peierls distortion in a magnetic flux, and the response of electrons the insulator is investigated when the tunneling current flows on one-dimensional gapped chains along the…

Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…

The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…