对“关于‘自旋基绝缘栅场效应晶体管的性能’评论的回应”的回应
介观与纳米尺度物理
2008-07-09 v1
摘要
我们表明Flatte和Hall在cond-mat/0607432中的论点是有缺陷且站不住脚的。由于根本性的科学障碍，他们的自旋基晶体管无法如声称的那样工作，这些障碍现在或将来都无法克服。他们的器件在室温下不太可能作为晶体管工作，更不用说如声称的那样超越传统的MOSFET。
引用
@article{arxiv.cond-mat/0607659,
title = {Response to "Response to the Comment on 'Performance of a Spin Based Insulated Gate Field Effect Transistor' "},
author = {S. Bandyopadhyay and M. Cahay},
journal= {arXiv preprint arXiv:cond-mat/0607659},
year = {2008}
}
备注
This is a response to cond-mat/0607432. We had submitted a Comment on the original paper by Hall and Flatte to Applied Physics Letters which is currently still under review. cond-mat/0607432 is apparently Hall and Flatte's response to our Comment. Here we show that the arguments in the response are flawed