相关论文: Transistor Switches using Active Piezoelectric Gat…

It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…

Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…

The 60 mV$/$decade subthreshold limit at room temperature, coined as the Boltzmann tyranny, remains a fundamental obstacle to the continued down-scaling of conventional transistors. While several strategies have sought to overcome this…

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…

A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…

The effects of reflecting boundaries on vacuum electric field fluctuations are treated. The presence of the boundaries can enhance these fluctuations and possibly lead to observable effects. The electric field fluctuations lead to voltage…

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…

Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…

It is shown that a sufficiently strong external electric field causes a decrease in the transition temperature of ferroelectric, antiferroelectric, and metal-insulator transitions. The temperature dependence of the critical electric field…

We theoretically investigate the effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic…

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…

Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…