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We show that a moderately strong constant electric field in the plane of a monolayer graphene sheet can create particle-hole pairs at an observable rate. The pairs undergo zitterbewegung in opposite directions leading to a Hall-like…

介观与纳米尺度物理 · 物理学 2008-06-03 J. C. Martinez , M. B. A. Jalil , S. G. Tan

The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…

介观与纳米尺度物理 · 物理学 2024-05-14 Kajetan M. Fijalkowski , Nan Liu , Martin Klement , Steffen Schreyeck , Karl Brunner , Charles Gould , Laurens W. Molenkamp

Anomalous Hall crystals (AHCs) are exotic phases of matter that simultaneously break continuous translation symmetry and exhibit the quantum anomalous Hall effect. AHCs have recently been proposed to explain the observation of an integer…

强关联电子 · 物理学 2026-04-28 Félix Desrochers , Mark R. Hirsbrunner , Joe Huxford , Adarsh S. Patri , T. Senthil , Yong Baek Kim

We show that, when graphene is subjected to an appropriate one-dimensional external periodic potential, additional branches of massless fermions are generated with nearly the same electron-hole crossing energy as that at the original Dirac…

介观与纳米尺度物理 · 物理学 2009-07-24 Cheol-Hwan Park , Young-Woo Son , Li Yang , Marvin L. Cohen , Steven G. Louie

The integer quantum Hall states at fillings $\nu = 0$ and $|\nu| = 1$ in monolayer graphene have drawn much attention as they are generated by electron-electron interactions. Here we explore aspects of the $\nu = 0$ and $|\nu| = 1$ quantum…

强关联电子 · 物理学 2020-11-09 Hank Chen , Matthew R. C. Fitzpatrick , Sujit Narayanan , Bitan Roy , Malcolm P. Kennett

Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in…

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in…

The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…

介观与纳米尺度物理 · 物理学 2025-07-29 Raul Perea-Causin , Hui Liu , Emil J. Bergholtz

We theoretically analyze the nonlinear valley Nernst effect (NVNE) as the second-order response of temperature gradient through the semiclassical framework of electron dynamics. Our study shows that an intrinsic nonlinear pure valley…

介观与纳米尺度物理 · 物理学 2025-10-08 Ying-Li Wu , Jia-Liang Wan , Xiao-Qin Yu

The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…

无序系统与神经网络 · 物理学 2018-07-11 G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , B. N. Zvonkov

We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is…

材料科学 · 物理学 2011-03-31 Antonio Hill , Andreas Sinner , Klaus Ziegler

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its…

介观与纳米尺度物理 · 物理学 2024-11-22 Arseny Gribachov , Vladimir Vyurkov , Dmitry Svintsov

It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…

介观与纳米尺度物理 · 物理学 2009-10-31 S. S. Murzin , I. Claus , A. G. M. Jansen , N. T. Moshegov , A. I. Toropov , K. Eberl

We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…

介观与纳米尺度物理 · 物理学 2009-11-11 J. Cumings , L. S. Moore , H. T. Chou , K. C. Ku , S. A. Crooker , N. Samarth , D. Goldhaber-Gordon

Starting from the graphene lattice tight-binding Hamiltonian with an on-site U and long-range Coulomb repulsion, we derive an interacting continuum Dirac theory governing the low-energy behavior of graphene in an applied magnetic field.…

介观与纳米尺度物理 · 物理学 2009-11-11 Jason Alicea , Matthew P. A. Fisher

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…

介观与纳米尺度物理 · 物理学 2024-10-10 Takuya Iwasaki , Yoshifumi Morita , Kenji Watanabe , Takashi Taniguchi

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per…

介观与纳米尺度物理 · 物理学 2015-05-13 A. J. Bestwick , E. J. Fox , Xufeng Kou , Lei Pan , Kang L. Wang , D. Goldhaber-Gordon

We predict a photoinduced Hall effect in an isotropic conventional two-dimensional superconductor with a built-in supercurrent exposed to a circularly-polarized light. This second-order with respect to the electromagnetic field amplitude…

超导电性 · 物理学 2024-02-06 A. V. Parafilo , V. M. Kovalev , I. G. Savenko

Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled…

The electronic structure and intrinsic anomalous Hall conductivity of nickel have been calculated based on the generalized gradient approximation (GGA) plus on-site Coulomb interaction (GGA+U) scheme. It is found that the intrinsic…

强关联电子 · 物理学 2015-05-28 Huei-Ru Fuh , Guang-Yu Guo
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