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相关论文: Tunable thermoelectricity in monolayers of MoS$_{2…

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We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…

介观与纳米尺度物理 · 物理学 2015-04-21 M. Tahir , A. Manchon , U. Schwingenschlogl

The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…

材料科学 · 物理学 2014-04-03 Darshana Wickramaratne , Ferdows Zahid , Roger K. Lake

We investigate the nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ under high-frequency circularly polarized driving using a low-energy $k\!\cdot\!p$ Hamiltonian combined with a van Vleck expansion. The off-resonant…

介观与纳米尺度物理 · 物理学 2025-11-20 Mohammad Mortezaei Nobahari

Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…

应用物理 · 物理学 2024-10-28 Ateeb Naseer , Musaib Rafiq , Somnath Bhowmick , Amit Agarwal , Yogesh Singh Chauhan

Monolayer transition metal dichalcogenides (TMDs) bare large Berry curvature hotspots readily exploitable for geometric band effects. Tailoring and enhancement of these features via strain is an active research direction. Here, we consider…

材料科学 · 物理学 2019-10-08 Shahnaz Aas , Ceyhun Bulutay

The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains…

材料科学 · 物理学 2025-05-06 D. Hernández-Pinilla , D. Cachago , Y. A. Xia , G. López-Polín , M. O Ramírez , L. E. Bausá

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers…

Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a…

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

We study thermoelectric transport in ultrathin topological insulators under the application of circularly polarized off-resonant light of frequency {\Omega} and amplitude A. We derive analytical expressions for the band structure, orbital…

介观与纳米尺度物理 · 物理学 2015-04-22 M. Tahir , P. Vasilopoulos

The higher-order topological insulator is an extended concept of the conventional topological insulator, which obeys the generalization of the standard bulk-boundary correspondence. In our paper, we predict the monolayer \textit{d1T}-phase…

材料科学 · 物理学 2026-05-19 Yingjie Hu , Heng Gao , Wei Ren

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion…

介观与纳米尺度物理 · 物理学 2020-10-21 Fei Xue , V. P. Amin , P. M. Haney

1T$^{\prime}$ phase of the monolayer transition metal dichalcogenides has recently attracted attention for its potential in nanoelectronic applications. We theoretically prove the topological behavior and phase transition of…

介观与纳米尺度物理 · 物理学 2025-03-19 Mohammad Mortezaei Nobahari , Mahmood Rezaei Roknabadi

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…

介观与纳米尺度物理 · 物理学 2023-06-09 Zhou Li , J. P. Carbotte

Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit…

介观与纳米尺度物理 · 物理学 2017-09-14 Guohua Wei , Erik J. Lenferink , David A. Czaplewski , Nathaniel P. Stern

Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…

介观与纳米尺度物理 · 物理学 2020-09-28 Zhun-Yong Ong , Gang Zhang , Linyou Cao , Yong-Wei Zhang

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…

介观与纳米尺度物理 · 物理学 2019-05-17 Munish Sharma , Ashok Kumar , P. K. Ahluwalia

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz
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