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The surfaces of three dimensional topological insulators (3D TIs) are generally described as Dirac metals, with a single Dirac cone. It was previously believed that a gapped surface implied breaking of either time reversal $\mathcal T$ or…

强关联电子 · 物理学 2014-04-28 Xie Chen , Lukasz Fidkowski , Ashvin Vishwanath

The coexistence and competition of superconductivity and magnetism can lead to a variety of rich physics and technological applications. Recent discovery of atomic-layer superconductors and self-assembly of magnetic molecules on solid…

In the purpose of expanding the family of two-dimensional materials, we predict the existence of two-dimensional octa-structure of nitrogen group elements that are composed of squares and octagons in first-principle method based on density…

材料科学 · 物理学 2015-12-08 Yu Zhang , Jason Lee , Wei-Liang Wang , Dao-Xin Yao

Recently determined atomistic scale structures of near-two dimensional bilayers of vitreous silica (using scanning probe and electron microscopy) allow us to refine the experimentally determined coordinates to incorporate the known local…

无序系统与神经网络 · 物理学 2017-11-13 Mahdi Sadjadi , Bishal Bhattarai , D. A. Drabold , M. F. Thorpe , Mark Wilson

We study the three-dimensional structure formation when atoms are deposited onto a substrate with a decagonal quasicrystalline order. Molecular-dynamicscalculations show that the adsorbate layer consists of ordered nano-scale domains with…

材料科学 · 物理学 2007-11-29 Muhittin Mungan , Yves Weisskopf , Mehmet Erbudak

Puzzling trends in surface stress were reported experimentally for Ni/W(110) as a function of Ni coverage. In order to explain this behavior, we have performed a density-functional-theory study of the surface stress and atomic structure of…

材料科学 · 物理学 2015-06-04 Natasa Stojic , Nadia Binggeli

A dodecagonal quasicrystal showing 12-fold symmetry forms in Mn-rich quaternary alloys containing 5.5 or 7.5 at.% Cr, 5.0 at.% Ni and 17.5 at.% Si. After annealing at 700 C for 130 h, the quasicrystal precipitated in a matrix of \b{eta}-Mn…

材料科学 · 物理学 2016-02-17 Shuhei Iwami , Tsutomu Ishimasa

The microscopic structure of the high-index Si$(331)-(12\times1)$ surface is investigated combining scanning tunneling microscopy with ab initio calculations. We present a structural model of the Si(331) surface, employing a reconstruction…

材料科学 · 物理学 2019-01-08 Ruslan Zhachuk , Sergey Teys

The electronic properties of the twisted InSe bilayer are studied by large-scale density functional theory. Spectral Function Unfolding reveals that the electronic structure of the twisted system can be described in terms of a combination…

材料科学 · 物理学 2022-02-28 Siow Mean Loh , Nicholas D. M. Hine

Silicene, the two-dimensional (2D) allotrope of silicon has very recently attracted a lot of attention. It has a structure that is similar to graphene and it is theoretically predicted to show the same kind of electronic properties which…

材料科学 · 物理学 2017-12-07 W. Wang , W. Olovsson , R. I. G. Uhrberg

A quantum Monte Carlo approach, considering all the corrugation effects, was used to calculate the complete phase diagram of the second $^3$He layer adsorbed on graphite. We found that a first-layer triangular solid was in equilibrium with…

其他凝聚态物理 · 物理学 2018-06-13 M. C. Gordillo , J. Boronat

Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111)…

材料科学 · 物理学 2014-12-03 Miao Zhou , Wenmei Ming , Zheng Liu , Zhengfei Wang , Ping Li , Feng Liu

Topological phases of electronic systems often coexist in a material, well-known examples being systems which are both strong and weak topological insulators. More recently, a number of materials have been found to have the topological…

介观与纳米尺度物理 · 物理学 2019-07-31 Jorge I. Facio , Sanjib Kumar Das , Yang Zhang , Klaus Koepernik , Jeroen van den Brink , Ion Cosma Fulga

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially…

应用物理 · 物理学 2022-03-02 Jonas Haas , Finn Ulrich , Christoph Hofer , Xiao Wang , Kai Braun , Jannik C. Meyer

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount…

材料科学 · 物理学 2018-11-14 Roman Kempt , Agnieszka Kuc , Jae Hyo Han , Jinwoo Cheon , Thomas Heine

Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the…

Using molecular dynamics simulation, we study structural and dynamical heterogeneities at melting in two-dimensional one-component systems with 36000 particles. Between crystal and liquid we find intermediate hexatic states, where the…

统计力学 · 物理学 2010-04-07 Hayato Shiba , Akira Onuki , Takeaki Araki

In a recent publication [2D Materials, 8, 045033 (2021), arXiv:2103.11403], it was reported that the growth of a monolayer PdTe$_2$ in ultra-high vacuum could be achieved by deposition of tellurium on a palladium (111) crystal surface and…

材料科学 · 物理学 2024-06-07 Eric Engel , Alexander Wegerich , Andreas Raabgrund , M. Alexander Schneider

The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der…

介观与纳米尺度物理 · 物理学 2013-03-15 Hyun-Jung Kim , Jun-Hyung Cho

By using first-principles calculation, the interaction of O2 and H2O molecules with the pristine and the defective InSe monolayers is studied. It is predicted that the single Se and In vacancies exhibit significantly enhanced chemical…

材料科学 · 物理学 2017-05-16 Dongwei Ma , Tingxian Li , Chaozheng He , Zhiwen Lu , Zhansheng Lu , Zongxian Yang , Yuanxu Wang