相关论文: Hall-effect sign-inversion in a realizable 3D meta…
The in-plane (thermal) Hall effect is an unconventional transverse response when the applied magnetic field is in the (heat) current plane. In contrast to the normal Hall effect, the in-plane Hall effect requires the absence of certain…
We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…
Hall effect of topological quantum materials often reveals essential new physics and possesses potential for application. Magnetic Weyl semimetal is one especially interesting example that hosts an interplay between the spontaneous…
We report the observation of a large anisotropic topological Hall effect (THE) in the hexagonal non-collinear magnet Fe5Sn3 single crystals. It is found that the sign of the topological Hall resistivity is negative when a magnetic field H…
The magneto-transport properties of planar and layered strongly inhomogeneous two-phase systems are investigated, using the explicit expressions for the effective conductivities and resistivities obtained by the exact dual transformation,…
First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
When phonons couple to fermions in 2D semimetals, the interaction may turn the system into an insulator. There are several insulating phases in which the time reversal and the sublattice symmetries are spontaneously broken. Examples are…
Physical systems with non-trivial topological order find direct applications in metrology[1] and promise future applications in quantum computing[2,3]. The quantum Hall effect derives from transverse conductance, quantized to unprecedented…
We derive an analytic expression for the geometric Hall viscosity of non-interacting electrons in a single graphene layer in the presence of a perpendicular magnetic field. We show that a recently-derived formula in [C. Hoyos and D. T. Son,…
Motivated by the recent experimental realization of the half-quantized Hall effect phase in a three-dimensional (3D) semi-magnetic topological insulator [M. Mogi et al., Nature Physics 18, 390 (2022)], we propose a scheme for realizing the…
In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
The Hall coefficient $R_H$ of Sr$_2$RuO$_4$ exhibits a non-monotonic temperature dependence with two sign reversals. We show that this puzzling behavior is the signature of two crossovers which are key to the physics of this material. The…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the…
The Hall effect and its varieties such as quantum, anomalous, and spin Hall effects, provide indispensable tools for the characterization of electronic and magnetic properties of materials, metrology, and spintronics. The conventional…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…