相关论文: Atomic origin of high temperature electron trappin…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
In developing our previous contribution (arXiv:1804.00889) we have numerically found the bound state energy and correspondent wave function of the two electrons confined to move in a quantum well placed close to the gate electrode.…
Sideband cooling is a popular method for cooling atoms to the ground state of an optical trap. Applying the same method to molecules requires a number of challenges to be overcome. Strong tensor Stark shifts in molecules cause the optical…
In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary…
The efficiency of cavity sideband cooling of trapped molecules is theoretically investigated for the case where the IR transition between two rovibrational states is used as a cycling transition. The molecules are assumed to be trapped…
In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
The shift in condensation temperature caused by interactions is studied up to second order in the s-wave scattering length in a Bose-Einstein condensate trapped in a temperature-dependent three-dimensional generic potential. With no…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
In a normal-metal/insulator/superconductor (NIS) tunnel junction refrigerator, the normal-metal electrons are cooled and the dissipated power heats the superconducting electrode. This paper presents a review of the mechanisms by which heat…
We have used diffraction gratings to simplify the fabrication, and dramatically increase the atomic collection efficiency, of magneto-optical traps using micro-fabricated optics. The atom number enhancement was mainly due to the increased…
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been…
Knowing the electronic structure of a material is essential in energy applications to rationalize its performance and propose alternatives. Materials for thermoelectric applications are generally small-gap semiconductors and should have a…
Strong light-matter interactions in silicon metasurfaces give rise to photothermal nonlinearities. While the effect of this strong coupling on light has been extensively studied, its impact on matter remains largely unexplored. Here, we…
Atoms in spatially dependent light fields are attracted to local intensity maxima or minima depending on the sign of the frequency difference between the light and the atomic resonance. For light fields confined in open high-Q optical…