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The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…

介观与纳米尺度物理 · 物理学 2024-05-06 Olivio Chiatti , Johannes Boy , Christian Heyn , Wolfgang Hansen , Saskia F. Fischer

We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both…

强关联电子 · 物理学 2015-06-04 Jared J. I. Wong , Adrian G. Swartz , Renjing Zheng , Wei Han , Roland K. Kawakami

We demonstrate a 20-fold enhancement in the strength of the RKKY interlayer exchange in dilute-ferromagnet/normal-metal multilayers by incorporating ultrathin Fe layers at the interfaces. Additionally, the resulting increase in the…

介观与纳米尺度物理 · 物理学 2020-08-26 Dmytro M. Polishchuk , Milton Persson , Mykola M. Kulyk , Erik Holmgren , Gabriele Pasquale , Vladislav Korenivski

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…

材料科学 · 物理学 2009-11-13 K. Olejnik , M. H. S. Owen , V. Novak , J. Masek , A. C. Irvine , J. Wunderlich , T. Jungwirth

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and…

材料科学 · 物理学 2012-03-09 M. Dobrowolska , K. Tivakornsasithorn , X. Liu , J. K. Furdyna , M. Berciu , K. M. Yu , W. Walukiewicz

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires…

材料科学 · 物理学 2009-11-11 K. F. Eid , B. L. Sheu , O. Maksimov , M. B. Stone , P. Schiffer , N. Samarth

We present a mean field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. When subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities is neglected, analytic result can…

介观与纳米尺度物理 · 物理学 2009-10-31 Byounghak Lee , T. Jungwirth , A. H. MacDonald

We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels…

材料科学 · 物理学 2015-05-14 Shinobu Ohya , Iriya Muneta , Masaaki Tanaka

The research on two-dimensional (2D) van der Waals (vdW) ferromagnets has promoted the development of ultrahigh-density and nanoscale data storage. However, intrinsic ferromagnetism in layered magnets is always subject to many factors, such…

We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and…

强关联电子 · 物理学 2020-03-19 N. V. Agrinskaya , A. M. Kalashnikova , V. I. Kozub

We show that the electric polarization at the interface with ultrathin superconducting (S) films sandwiched between ferroelectric (FE) layers allows achievement of substantially stronger modulation of inner carrier density and…

超导电性 · 物理学 2007-05-23 Natalia Pavlenko

We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property…

介观与纳米尺度物理 · 物理学 2009-11-10 Swaroop Ganguly , L. F. Register , S. Banerjee , A. H. MacDonald

We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature $T_C$ as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant…

介观与纳米尺度物理 · 物理学 2009-11-07 J. Jaroszynski , T. Andrearczyk , G. Karczewski , J. Wrobel , T. Wojtowicz , E. Papis , E. Kaminska , A. Piotrowska , Dragana Popovic , T. Dietl

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing…

In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering…

Finding and designing ferromagnets that operate above room temperature is crucial in advancing high-performance spintronic devices. The pioneering van der Waals (vdW) ferromagnet Fe$_{3}$GaTe$_{2}$ has extended the way for spintronic…

材料科学 · 物理学 2025-04-25 Yuanji Xu , Xintao Jin , Jiacheng Xiang , Huiyuan Zhang , Fuyang Tian

A complex interplay of different energy scales involving Coulomb repulsion, spin-orbit coupling and Hund's coupling energy in two-dimensional (2D) van der Waals (vdW) material produces novel emerging physical state. For instance,…

We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy.…

The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more…

介观与纳米尺度物理 · 物理学 2014-10-09 Qingze Wang , Xin Liu , Hai-Jun Zhang , Nitin Samarth , Shou-Cheng Zhang , Chao-Xing Liu