可调型交换偏置与电压控制磁化切换于石墨烯铁基铁磁体
材料科学
2024-11-28 v1
摘要
石墨烯磁性体的发现开辟了磁性学新领域，为电子控制磁性属性提供了新途径。在此背景下，Fe3GeTe2（FGT）因其内在金属特性，能够实现电荷与自旋度的相互作用，成为典型候选材料。本文展示了全石墨烯FGT/O-FGT/hBN垂直磁化异质结构中可双向调谐的交换偏置（EB）效应。通过天然氧化FGT表面形成抗磁O-FGT层。观察到的EB幅度达1.4 kOe，阻塞温度（150 K）接近FGT的铁磁临界温度。EB值和阻塞温度均为层状材料中最高水平之一。EB调制随栅极电压线性变化，电压极性影响亦显著，正负场降实验中均可观察。此外，展示了栅极电压控制的磁化切换，凸显FGT基异质结构在先进自旋器件中的潜力。这些发现为调控石墨烯磁性体提供了方法，为开发高性能磁性器件开辟了新思路。
引用
@article{arxiv.2411.18278,
title = {Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet},
author = {Mayank Sharma and Garen Avedissian and Witold Skowroński and Junhyeon Jo and Andrey Chuvilin and Fèlix Casanova and Marco Gobbi and Luis E. Hueso},
journal= {arXiv preprint arXiv:2411.18278},
year = {2024}
}
备注
This project has received funding from the European Union's H2020 research and innovation programme under grant agreement Nos. 965046 (INTERFAST) and 964396 (SINFONIA), and Marie Sk{\l}odowska-Curie grant agreement No. 955671 (SPEAR). To be published in Advanced Materials Interfaces (Early View: 2400678)