相关论文: Modulation of ferromagnetism in (In,Fe)As quantum …
The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…
We propose a fractionally quantized polarization induced by interlayer sliding in bilayer altermagnets, unveiling a previously unrecognized multiferroic phase termed sliding fractional quantum multiferroicity (SFQM). This unconventional…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling…
This paper reviews recent developments in the theory of the quantum Hall effect (QHE) in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional organic conductors (TMTSF)$_2$X. The origin and the basic…
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped…
The question whether the Anderson-Mott localisation enhances or reduces magnetic correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of (Ga,Mn)As and related magnetic semiconductors, for which…
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…
The magnetic properties of thin-film Pd/Fe/Pd trilayers in which an embedded ~1.5 A-thick ultrathin layer of Fe induces ferromagnetism in the surrounding Pd have been investigated. The thickness of the ferromagnetic trilayer is controlled…
We study the effect of electron-electron interaction on the transport properties of short clean quantum wires adiabatically connected to reservoirs. Interactions lead to resonances in a multi-channel wire at particular values of the Fermi…
The electronic functionality of thin films is governed by their interfaces. This is very important for the ferroelectric (FE) state which depends on thin-film clamping and interfacial charge transfer. Here we show that in a heterostructure…
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with…
Fractional Chern insulators (FCI) with fractionally quantized Hall conductance at fractional fillings and an extended quantum anomalous Hall (EQAH) crystal with an integer quantized Hall conductance over an extended region of doping were…
Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet…
The implementation and control of room temperature ferromagnetism (RTFM) by adding magnetic atoms to a semiconductor's lattice has been one of the most important problems in solid state state physics in the last decade. Herein we report for…
The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an…
The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum…
The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…