相关论文: Lateral Heterojunction Sb2Te3/Bi2Te3 and its topol…
Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent…
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial…
The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray…
Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly…
We have performed angle-resolved photoemission spectroscopy on a heterostructure consisting of topological insulator Bi2Te3 and iron chalcogenide FeTe fabricated on SrTiO3 substrate by molecular-beam-epitaxy technique. This system was…
The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti…
Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Se$_3$ with uniaxial and biaxal strain, which show…
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
It is challenging to grow an epitaxial four-fold compound superconductor (SC) on six-fold topological insulator (TI) platform due to stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI…
The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data…
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different…
We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating…
A novel approach to reduce bulk conductance by the use of short period superlattices (SL) of two alternating topological insulator layers is presented. Evidence for a superlattice gap enhancement (SGE) was obtained from the observed…
Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…
Bi2Te3 is a member of a new class of materials known as topological insulators which are supposed to be insulating in the bulk and conducting on the surface. However experimental verification of the surface states has been difficult in…
Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators…
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS…
The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially…