相关论文: Spin transport and spin conversion in compound sem…

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

Understanding the evolution of spin-orbit torque (SOT) with increasing heavy-metal thickness in ferromagnet/normal metal (FM/NM) bilayers is critical for the development of magnetic memory based on SOT. However, several experiments have…

We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the…

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…

The spin-pumping mechanism is probed through a tunnelling MgO interlayer in Fe/Pt bilayers. We show by ferromagnetic resonance technique and spin-pumping experiments that spin currents can tunnel through the MgO interlayer for thickness up…

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…

We have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency…

Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in…

We present a microscopic theory for transport of the spin polarized charge density wave with both electrons and holes in the $(111)$ GaAs quantum wells. We analytically show that, contradicting to the commonly accepted belief, the spin and…

We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt…

Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T…

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…

We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be…

We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin…

The transport of spin information has been studied in various materials, such as metals, semiconductors and graphene. In these materials, spin is transported by diffusion of conduction electrons. Here we study the diffusion and relaxation…

We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the…

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected…