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We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall…

材料科学 · 物理学 2017-11-01 Chang Liu , Yunyi Zang , Wei Ruan , Yan Gong , Ke He , Xucun Ma , Qi-Kun Xue , Yayu Wang

We study weak anti-localization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. Two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of…

介观与纳米尺度物理 · 物理学 2011-04-25 Hong-Tao He , Gan Wang , Tao Zhang , Iam-Keong Sou , George K. L. Wong , Jian-Nong Wang , Hai-Zhou Lu , Shun-Qing Shen , Fu-Chun Zhang

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS…

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites…

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…

介观与纳米尺度物理 · 物理学 2014-03-04 Li Zhang , Merav Dolev , Qi I. Yang , Robert H. Hammond , Bo Zhou , Alexander Palevski , Yulin Chen , Aharon Kapitulnik

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission…

The article comprises structural, microstructural, and physical properties analysis of Bi2Se3-xTex (x= 0, 1, 2 and 3) mixed topological insulator (MTI) single crystals. All the crystals were grown through a well-optimized solid-state…

材料科学 · 物理学 2020-12-02 Deepak Sharma , Yogesh Kumar , P. Kumar , Vipin Nagpal , S. Patnaik , V. P. S. Awana

Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…

材料科学 · 物理学 2020-11-26 T. Guillet , A. Marty , C. Beigné , C. Vergnaud , M. -T. Dau , P. Noël , J. Frigerio , G. Isella , M. Jamet

We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…

介观与纳米尺度物理 · 物理学 2014-11-18 Radha Krishna Gopal , Sourabh Singh , Ramesh Chandra , Chiranjib Mitra

We investigate the magnetic and magnetotransport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films grown on (100) oriented SrTiO3 (STO) substrates. The thin films fabricated using the pulsed laser deposition technique have been…

The Berry curvature plays a key role in the magnetic transport of topological materials. Yet, it is not clear whether the Berry curvature by itself can give rise to universal transport phenomena with specific scaling behaviors. In this…

介观与纳米尺度物理 · 物理学 2023-04-20 Min-Xue Yang , Hai-Dong Li , Wei Luo , Bingfeng Miao , Wei Chen , D. Y. Xing

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…

材料科学 · 物理学 2018-05-02 Prosper Ngabonziza , Yi Wang , Alexander Brinkman

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field,…

强关联电子 · 物理学 2017-05-17 K. Shrestha , M. Chou , D. Graf , H. D. Yang , B. Lorenz , C. W. Chu

We studied longitudinal and Hall photothermal voltages under a planar magnetic field scan in epitaxial thin films of the Topological Insulator (TI) Sb2Te3, grown using pulsed laser deposition (PLD). Unlike prior research that utilised…

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

介观与纳米尺度物理 · 物理学 2012-12-21 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

Granular conductors form an artificially engineered class of solid state materials wherein the microstructure can be tuned to mimic a wide range of otherwise inaccessible physical systems. At the same time, topological insulators (TIs) have…

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new…

介观与纳米尺度物理 · 物理学 2019-07-03 Pan He , Steven S. -L. Zhang , Dapeng Zhu , Shuyuan Shi , Olle G. Heinonen , Giovanni Vignale , Hyunsoo Yang

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous…

介观与纳米尺度物理 · 物理学 2016-08-15 S. Wiedmann , A. Jost , B. Fauque , J. van Dijk , M. J. Meijer , T. Khouri , S. Pezzini , S. Grauer , S. Schreyeck , C. Brune , H. Buhmann , L. W. Molenkamp , N. E. Hussey

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of…

We report synthesis, structural details and electrical transport properties of topological insulator Bi2Te3. The single crystalline specimens of Bi2Te3 are obtained from high temperature (950C) melt and slow cooling (2C/hour). The resultant…

强关联电子 · 物理学 2017-02-01 Rabia Sultana , P. Neha , R. Goyal , S. Patnaik , V. P. S. Awana