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相关论文: Anisotropic charged impurity-limited carrier mobil…

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We study the charged impurity limited mobility in black phosphorus, a highly anisotropic layered material. We compute the mobility within the Boltzmann transport equation under detailed balance condition, and taking into account the…

材料科学 · 物理学 2016-04-06 Yue Liu , Tony Low , P. Paul Ruden

Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…

介观与纳米尺度物理 · 物理学 2017-05-03 Yue Liu , P. Paul Ruden

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field…

介观与纳米尺度物理 · 物理学 2017-04-12 Yuri Trushkov , Vasili Perebeinos

We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to…

材料科学 · 物理学 2016-06-17 A. N. Rudenko , S. Brener , M. I. Katsnelson

The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time…

计算物理 · 物理学 2016-12-28 Haifeng Lang , Shuqing Zhang , Zhirong Liu

Recent $\textit{ab initio}$ theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26,000 to 35 cm$^{2}$ V$^{-1}$…

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black…

介观与纳米尺度物理 · 物理学 2015-10-20 Zhe Luo , Jesse Maassen , Yexin Deng , Yuchen Du , Richard P. Garrelts , Mark S. Lundstrom , Peide D. Ye , Xianfan Xu

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…

We explore the impact of strain on charge carrier mobility of monolayer $\alpha$, $\beta$, $\gamma$ and $\delta$-P, the four well known atomically thin allotropes of phosphorus, using density functional theory. Owing to the highly…

材料科学 · 物理学 2018-04-18 Achintya Priydarshi , Yogesh Singh Chauhan , Somnath Bhowmick , Amit Agarwal

New classes two-dimensional (2D) materials beyond graphene, including layered and non-layered, and their heterostructures, are currently attracting increasing interest due to their promising applications in nanoelectronics, optoelectronics…

We show that black phosphorus has room-temperature charge mobilities on the order of 10$^4$ cm$^2$V$^{-1}$s$^{-1}$, which are about one order of magnitude larger than silicon. We also demonstrate strong anisotropic transport in black…

材料科学 · 物理学 2015-03-31 Jiaqi He , Dawei He , Yongsheng Wang , Qiannan Cui , Matthew Z. Bellus , Hsin-Ying Chiu , Hui Zhao

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…

材料科学 · 物理学 2013-11-22 Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

The deposition of a high-$\kappa$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this…

材料科学 · 物理学 2014-09-04 Zhun-Yong Ong , Massimo V. Fischetti

Using first-principles calculations and non-equilibrium Green's function method, we investigate the ballistic thermal transport in single-layer phosphorene. A significant crystallographic orientation dependence of thermal conductance is…

介观与纳米尺度物理 · 物理学 2017-04-18 Zhun-Yong Ong , Yongqing Cai , Gang Zhang , Yong-Wei Zhang

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…

材料科学 · 物理学 2014-12-10 Jared H. Strait , Parinita Nene , Farhan Rana
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