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相关论文: Disorder-induced double resonant Raman process in …

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We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional…

介观与纳米尺度物理 · 物理学 2011-07-26 Pedro Venezuela , Michele Lazzeri , Francesco Mauri

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…

The paper reports a theoretical study of scattering of electrons by edges in graphene and its effect on Raman scattering. First, effective models are discussed for translationally invariant and rough edges. Second, they are used in a…

材料科学 · 物理学 2009-05-28 D. M. Basko

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect…

Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…

光学 · 物理学 2024-03-21 Somayeh Gholipour , Maryam Bahreini , Mohamad Reza Jafarfard

The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the…

介观与纳米尺度物理 · 物理学 2018-12-19 Felix Herziger , Christoph Tyborski , Oliver Ochedowski , Marika Schleberger , Janina Maultzsch

Broadening of the Raman scattering (RS) spectra was studied in monolayer graphene samples irradiated with various dose of ions followed by annealing of radiation damage at different temperatures. It is shown that the width {\Gamma} (full…

介观与纳米尺度物理 · 物理学 2019-12-13 I. Shlimak , A. Butenko , E. Kogan , M. Kaveh

Raman Spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene…

介观与纳米尺度物理 · 物理学 2012-07-10 Axel Eckmann , Alexandre Felten , Artem Mishchenko , Liam Britnell , Ralph Krupke , Kostya S. Novoselov , Cinzia Casiraghi

Raman spectroscopy of graphene is reviewed from a theoretical perspective. After an introduction of the building blocks (electronic band structure, phonon dispersion, electron-phonon interaction, electron-light coupling), Raman intensities…

介观与纳米尺度物理 · 物理学 2017-03-23 Sven Reichardt , Ludger Wirtz

The polarization dependences of the G, D, and 2D (G$'$) bands in Raman spectra at graphene bulk and edge are examined theoretically. The 2D and D bands have different selection rules at bulk and edge. At bulk, the 2D band intensity is…

介观与纳米尺度物理 · 物理学 2010-11-15 K. Sasaki , K. Wakabayashi , T. Enoki

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra…

介观与纳米尺度物理 · 物理学 2014-12-17 Valentin N. Popov , Philippe Lambin

We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle \theta. We find a relatively simple dependence of the Raman G peak…

介观与纳米尺度物理 · 物理学 2013-11-05 Sinisa Coh , Liang Z. Tan , Steven G. Louie , Marvin L. Cohen

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…

介观与纳米尺度物理 · 物理学 2015-03-19 Duhee Yoon , Young-Woo Son , Hyeonsik Cheong

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a…

材料科学 · 物理学 2015-06-04 Zhiqiang Luo , Chunxiao Cong , Jun Zhang , Qihua Xiong , Ting Yu

Richness and complexity of Raman spectra related to graphene materials is established from years to decades, with, among others: the well-known G, D, 2D,... bands plus a plethora of weaker bands related to disorder behavior, doping, stress,…

Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two…

材料科学 · 物理学 2018-04-27 Elena del Corro , Ladislav Kavan , Martin Kalbac , Otakar Frank

Edges naturally exist in a single-layer graphene sample. Similarly, individual graphene layers in a multilayer graphene sample contribute their own edges. We study the Raman spectrum at the edge of a graphene layer laid on n layer graphene…

材料科学 · 物理学 2015-01-15 Q. -Q. Li , X. Zhang , W. -P. Han , Y. Lu , W. Shi , J. -B. Wu , P. -H. Tan

We have revisited the still unresolved puzzle of the dispersion of the Raman disordered-induced D band as a function of laser excitation photon energy E$_L$ in graphite-like materials. We propose that the D-mode is a combination of an optic…

无序系统与神经网络 · 物理学 2009-11-07 A. K. Sood , Rajeev Gupta , S. A. Asher

We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal…

Polarized Raman scattering has been performed on CaC6 superconductor. We identify two of the three Raman active Eg phonon modes at 440 and 1508 cm-1 expected for the R-3m space group of CaC6. These first order scattering modes appear along…

材料科学 · 物理学 2009-11-13 A. Mialitsin , J. S. Kim , R. K. Kremer , G. Blumberg
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