相关论文: Disorder-induced double resonant Raman process in …
The Raman $2D$-band -important for the analysis of graphene- shows a splitting for uniaxial strain. The splitting depends on the strength and direction of the applied strain and on the polarization of the incident and outgoing light. We…
We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band…
Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain,…
Electronic Raman scattering measures a polarization-dependent scattering intensity which can provide information about the location of nodes in the energy gap of an unconventional superconductor as well as its overall symmetry. In this…
We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…
We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…
Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity…
The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of…
We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the…
We present an \textit{ab initio} study based on density-functional theory of first- and second-order Raman spectra of graphene-based materials with different stacking arrangements and numbers of layers. Going from monolayer and bilayer…
Second-order Raman scattering has been extensively studied in carbon-based nanomaterials, \emph{e.g.} nanotube and graphene, because it activates normally forbidden Raman modes that are sensitive to crystal disorder, such as defects,…
The stacking faults (deviates from Bernal) will break the translational symmetry of multilayer graphenes and modify their electronic and optical behaviors to the extent depending on the interlayer coupling strength. This paper addresses the…
We present Raman spectroscopy measurements of non-etched graphene nanoribbons, with widths ranging from 15 to 160 nm, where the D-line intensity is strongly dependent on the polarization direction of the incident light. The extracted edge…
Graphene edges are of particular interest, since their chirality determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with well defined edges oriented at different crystallographic…
By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer…
We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…
Raman spectroscopy plays a key role in studies of graphene and related carbon systems. Graphene is perhaps the most promising material of recent times for many novel applications, including electronics. In this paper, the traditional and…
The most important bands for the evaluation of strain in graphene (the 2D and 2D prime modes) are investigated. It is shown that for Bernal-stacked bilayers, the two-phonon Raman features have three different components that can be assigned…
The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G…
Bernal- and non-Bernal-stacked graphene layers have been systematically studied by Raman imaging and spectroscopy. Two dominant Raman modes, G and G' (or 2D) of folded graphene layers exhibit three types of spectral features when interlayer…