相关论文: Towards high mobility InSb nanowire devices
In this work, a new theoretical approach to study the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. The proposed approach consists in a…
With the continuous advancement of nanotechnology, nanodevices have become crucial components in computing, sensing and energy conversion applications. However, the structures of nanodevices typically possess sub-wavelength dimensions and…
Niobium thin films on silicon substrate used in the fabrication of superconducting qubits have been characterized using scanning and transmission electron microscopy, electrical transport, magnetization, quasiparticle spectroscopy, and…
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…
Networks of nanowires and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the inter-particle junction resistance, a property that is challenging to…
Spin-orbit interactions are known to have drastic effects on the band structure of heavy-element-based materials. Celebrated examples are the recently identified 3D and 2D topological insulators. In those systems transport takes place at…
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values…
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature…
High-quality single crystals of the half-Heusler compound DyNiSb were investigated for their low temperature thermodynamic and magnetotransport properties. Magnetic susceptibility, heat capacity, and electrical resistivity measurements…
The spin-transfer torque motion of magnetic domain walls (DWs) in a CoB/Ni-based nanowire driven by a low current density of (1.12\pm0.8)\times10^{11} A m^{-2} has been observed indirectly by magnetotransport measurements. A high DW…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…
We simulated electron transport across a binary nanocrystal solid (BNS) of PbSe NCs with diameters of 6.5nm and 5.1nm. We used our Hierarchical Nanoparticle Transport Simulator HINTS to model the transport in these BNSs. The mobility…
We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the…
Superconducting nanowires are very important due to their applications ranging from quantum technology to astronomy. In this work, we implement a non-invasive process to fabricate nanowires of high-$T_\text{c}$ superconductor…
We investigate the nonlinear mechanics of a bimetallic, optically absorbing SiN-Nb nanowire in the presence of incident laser light and a reflecting Si mirror. Situated in a standing wave of optical intensity and subject to photothermal…
The advances in the growth techniques provide numerous scope to explore the possibilities of new 2D materials for potential applications. With the aid of first-principle calculations we show that 2D Na can be a new addition to the family of…
We study the conductance of a junction between the normal and superconducting segments of a nanowire, both of which are subjected to spin-orbit coupling and an external magnetic field. We directly compare the transport properties of the…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…