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Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely…

应用物理 · 物理学 2020-06-20 N. Fang , S. Toyoda , T. Taniguchi , K. Watanabe , K. Nagashio

Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$…

Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor…

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical…

This thesis is dedicated to the synthesis, characterization and the study of electrical transport through metal nanowires and nanotubes. The metal nanowires(Ni, Cu) and nanotubes(Cu) are synthesised by electrochemical deposition in…

介观与纳米尺度物理 · 物理学 2011-10-25 M. Venkata Kamalakar

The attachment of well-defined charge transfer agents to the surface of nanomaterials is an efficient strategy to control their charge density and also to tune their optical, electrical, and physicochemical properties. Particularly…

Amorphous thin film superconductors are promising alternatives for the development of superconducting radiation detectors, especially superconducting nanowire single photon detectors (SNSPDs) and superconducting microwire single photon…

超导电性 · 物理学 2025-10-08 Shekhar Chandra Pandey Shilpam Sharma , M. K. Chattopadhyay

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

介观与纳米尺度物理 · 物理学 2015-06-03 Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Yohta Sata , Sei Morikawa , Satoru Masubuchi , Tomoki Machida

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for…

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…

介观与纳米尺度物理 · 物理学 2007-05-23 L. Latessa , A. Pecchia , A. Di Carlo

In this work we present an ab-initio study of electronic properties of 1 dimensional (1D) core-shell nanostructures made of MS2 (MoS2, WS2) or BN armchair nanotube encapsulated carbon nanotubes (CNT). With local density approximation (LDA)…

材料科学 · 物理学 2017-03-24 Amretashis Sengupta

Carbon nanotubes (CNTs) are quasi-1D nanostructures that display both high thermal conductivity and intriguing low-dimensional phonon transport phenomena. In comparison to the advances made in the theoretical calculation of the lattice…

应用物理 · 物理学 2023-08-29 Qianru Jia , Yuanyuan Zhou , Xun Li , Lucas Lindsay , Li Shi

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface…

The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…

介观与纳米尺度物理 · 物理学 2015-10-20 Dehui Li , Rui Cheng , Hailong Zhou , Chen Wang , Anxiang Yin , Yu Chen , Nathan O. Weiss , Yu Huang , Xiangfeng Duan

Recently, the two dimensional complex MA$_2$Z$_4$ structures have been suggested as suitable replacements for silicon channels in field-effect transistors (FETs). Specifically, two materials of MoSi$_2$N$_4$ and WSi$_2$N$_4$ due to their…

材料科学 · 物理学 2023-05-09 Zahra Shomali

This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…

材料科学 · 物理学 2015-05-19 Faisal Ahmed , Min Sup Choi , Xiaochi Liu , Won Jong Yoo

We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…

介观与纳米尺度物理 · 物理学 2019-08-30 Giorgio De Simoni , Federico Paolucci , Claudio Puglia , Francesco Giazotto

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…

其他凝聚态物理 · 物理学 2009-11-13 H. Cazin d'Honincthun , S. Galdin-Retailleau , A. Bournel , P. Dollfus , J. -P. Bourgoin

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…

应用物理 · 物理学 2019-10-02 Jakob Lenz , Fabio del Giudice , Fabian R. Geisenhof , Felix Winterer , R. Thomas Weitz