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Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel…

介观与纳米尺度物理 · 物理学 2013-04-02 Ferdows Zahid , Lei Liu , Yu Zhu , Jian Wang , Hong Guo

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…

介观与纳米尺度物理 · 物理学 2009-09-22 V. K. Sangwan , V. W. Ballarotto , M. S. Fuhrer , E. D. Williams

Carbon nanotubes are a fraction of the size of transistors used in today's best microchips, as it could reduce power demands and heating in next electronics revolution. Present study investigates the electronic and magnetic structure of…

We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…

介观与纳米尺度物理 · 物理学 2015-10-28 Chi-Shuen Lee , Eric Pop , Aaron D. Franklin , Wilfried Haensch , H. -S. Philip Wong

Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…

应用物理 · 物理学 2021-03-10 Nannan Li , Fei Yan , Baoqing Zeng , Yi Luo

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…

介观与纳米尺度物理 · 物理学 2013-03-08 E. R. Viana , J. C. Gonzalez , G. M. Ribeiro , A. G. de Oliveira

Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…

介观与纳米尺度物理 · 物理学 2009-11-11 S. A. McGill , S. G. Rao , P. Manandhar , S. Hong , P. Xiong

High electronic transport and reasonable chemical stability of molybdenum disulfide (MoS$_2$) make it very suitable for electrochemical applications. However, its energy storage capacity is still low compared with other nanostructures. In…

应用物理 · 物理学 2022-08-19 Marzieh Rashidi , Foad Ghasemi

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…

介观与纳米尺度物理 · 物理学 2015-10-28 Chi-Shuen Lee , Eric Pop , Aaron D. Franklin , Wilfried Haensch , H. -S. Philip Wong

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review…

材料科学 · 物理学 2019-07-24 T. V. Shubina , M. Remškar , V. Yu. Davydov , K. G. Belyaev , A. A. Toropov , B. Gil

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…

介观与纳米尺度物理 · 物理学 2010-09-24 Manu Jaiswal , C. S. Suchand Sangeeth , Wei Wang , Ya-Ping Sun , Reghu Menon

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…

The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a…

介观与纳米尺度物理 · 物理学 2014-09-19 Chih-Pin Lu , Guohong Li , Jinhai Mao , Li-Min Wang , Eva Y. Andrei

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…

材料科学 · 物理学 2007-05-23 Pengfei Qi , Ali Javey , Marco Rolandi , Qian Wang , Erhan Yenilmez , Hongjie Dai

Room-temperature ferromagnetism (RTFM) exhibited by nanostructured two-dimensional semiconductors for spintronics applications is a fascinating area of research. The present work reports on the correlation between the electronic structure…

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…

介观与纳米尺度物理 · 物理学 2024-08-09 Seyed Saleh Mousavi Khaleghi , Jianyong Wei , Yumeng Liu , Zhengfang Fan , Kai Li , Kenneth B. Crozier , Yaping Dan