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Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Two-dimensional transition metal dichalcogenides (TMDs) exhibit an extensive variety of novel electronic properties, such as charge density wave quantum spin Hall phenomena, superconductivity, and Dirac and Weyl semi-metallic properties.…

强关联电子 · 物理学 2023-09-15 S. Koley

The interlayer couplings in commensurate and incommensurate bilayer structures of transition metal dichalcogenides are investigated with perturbative treatment. The interlayer coupling in \pm K valleys can be decomposed into a series of…

介观与纳米尺度物理 · 物理学 2017-03-28 Yong Wang , Zhan Wang , Wang Yao , Gui-Bin Liu , Hongyi Yu

Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted…

We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…

介观与纳米尺度物理 · 物理学 2016-01-28 Yue Wu , Qingjun Tong , Gui-Bin Liu , Hongyi Yu , Wang Yao

Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

介观与纳米尺度物理 · 物理学 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures…

Intervalley scattering by atomic defects in monolayer transition metal dichalcogenides (TDMs; MX2) presents a serious obstacle for applications exploiting their unique valley-contrasting properties. Here, we show that the symmetry of the…

介观与纳米尺度物理 · 物理学 2018-01-17 Kristen Kaasbjerg , Johannes H. J. Martiny , Tony Low , Antti-Pekka Jauho

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers…

Based on first-principles calculations, we predict that the monolayer AuTe2Cl is a quantum spin Hall (QSH) insulator with a topological band gap about 10 meV. The three-dimensional (3D) AuTe2Cl is a topological semimetal that can be viewed…

材料科学 · 物理学 2020-12-22 Guyue Zhong , Q. Xie , Gang Xu

Exchange interaction has been studied for electrons in coupled quantum dots (QD's) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre…

介观与纳米尺度物理 · 物理学 2015-05-13 A. Kwasniowski , J. Adamowski

The discovery of archetypal two-dimensional (2D) materials provides enormous opportunities in both fundamental breakthroughs and device applications, as evident by the research booming in graphene, atomically thin transition-metal…

介观与纳米尺度物理 · 物理学 2018-11-27 Chenqiang Hua , Feng Sheng , Qifeng Hu , Zhu-An Xu , Yunhao Lu , Yi Zheng

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

介观与纳米尺度物理 · 物理学 2018-04-24 K. L. Chiu

Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band gap renormalisation for device application such as single photon emitters. Here, a…

介观与纳米尺度物理 · 物理学 2018-06-06 Matthew Brooks , Guido Burkard

Two-dimensional transition metal dichalcogenides (TMDs) usually exist in two or more structural phases with different physical properties, and can be repeatedly switched between these phases via different stimuli, making them potentially…

材料科学 · 物理学 2020-04-29 Priyanka Manchanda , Pankaj Kumar , Pratibha Dev

Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…

强关联电子 · 物理学 2021-01-04 Ludmila Szulakowska , Moritz Cygorek , Maciej Bieniek , Pawel Hawrylak

The multivalley band structure of monolayer transition metal dichalcogenides (TMDs) gives rise to intravalley and intervalley excitons. Much knowledge of these excitons has been gained, but fundamental questions remain, such as how to…

介观与纳米尺度物理 · 物理学 2021-12-08 Ngoc-Cam Hoang , Thanh-Phuc Nguyen , Vladimir A. Osipov

The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley…

介观与纳米尺度物理 · 物理学 2017-05-24 Kai Hao , Lixiang Xu , Fengcheng Wu , Philipp Nagler , Kha Tran , Xin Ma , Christian Schüller , Tobias Korn , Allan H. MacDonald , Galan Moody , Xiaoqin Li

Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…