中文
相关论文

相关论文: THz-Frequency Modulation of the Hubbard U in an Or…

200 篇论文

The competition between electron localization and de-localization in Mott insulators underpins the physics of strongly-correlated electron systems. Photo-excitation, which re-distributes charge between sites, can control this many-body…

Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…

强关联电子 · 物理学 2019-08-28 Zheng Zhu , D. N. Sheng , Liang Fu

Nonequilibrium dynamics in correlated materials has attracted attention due to the possibility of characterizing, tuning, and creating complex ordered states. To understand the photoinduced microscopic dynamics, especially the linkage under…

强关联电子 · 物理学 2017-12-27 Yao Wang , Martin Claassen , B. Moritz , T. P. Devereaux

Most available theories for correlated electron transport are based on the Hubbard Hamiltonian. In this effective theory, renormalized hopping and interaction parameters only implicitly incorporate the coupling of correlated charge carriers…

Ultrafast pump-probe spectroscopy with high temporal and spectral resolutions provides new insight into ultrafast nonequilibrium phenomena. We propose that transient interference between pump and probe pulses is realized in pump-probe…

强关联电子 · 物理学 2018-10-04 Kazuya Shinjo , Takami Tohyama

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($\kappa$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses…

Electron-phonon-driven charge density waves can in some circumstances allow electronic correlations to become predominant, driving a system into a Mott insulating state. New insights into both the Mott state and preceding charge density…

强关联电子 · 物理学 2021-03-31 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than half-century of intense research efforts. Well-developed momentum-resolved spectroscopies such as photoemission or neutron…

强关联电子 · 物理学 2009-11-07 M. Z. Hasan , E. D. Isaacs , Z-X. Shen , L. L. Miller , K. Tsutsui , T. Tohyama , S. Maekawa

In condensed matter physics, various mechanisms give rise to distinct insulating phases. The competition and interplay between these phases remain elusive, even for the seemingly most distinguishable band and Mott insulators. In multilayer…

材料科学 · 物理学 2025-02-14 Zijian Lin , Jie Li , Xiaodong Cao , Jingjing Gao , Xuan Luo , Yuping Sun , Yi Lu , Nanlin Wang , Jiandong Guo , Xuetao Zhu

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

超导电性 · 物理学 2021-06-14 Haiwei Li , Shusen Ye , Jianfa Zhao , Changqing Jin , Yayu Wang

We study the structural, electronic and vibrational properties of single-layer 1TNbSe$_2$ from first principles. Within the generalized gradient approximation, the 1T polytype is highly unstable with respect to the 2H. The DFT+U method…

材料科学 · 物理学 2018-07-18 Matteo Calandra

A charge excitation in a two-dimensional Mott insulator is strongly coupled with the surrounding spins, which is observed as magnetic-polaron formations of doped carriers and a magnon sideband in the Mott-gap transition spectrum. However,…

强关联电子 · 物理学 2018-10-12 T. Miyamoto , Y. Matsui , T. Terashige , T. Morimoto , N. Sono , H. Yada , S. Ishihara , Y. Watanabe , S. Adachi , T. Ito , K. Oka , A. Sawa , H. Okamoto

We analyze the role of spatial electronic correlations and, in particular, of the magnetic fluctuations in Mott insulators. A half-filled Hubbard model is solved at large strength of the repulsion U on a two-dimensional square lattice using…

强关联电子 · 物理学 2024-02-19 Evgeny A. Stepanov , Maria Chatzieleftheriou , Niklas Wagner , Giorgio Sangiovanni

We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard…

强关联电子 · 物理学 2013-05-29 Martin Eckstein , Philipp Werner

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…

强关联电子 · 物理学 2016-02-18 Luca F. Tocchio , Federico Arrigoni , Sandro Sorella , Federico Becca

Femtosecond relaxation of photo-excited quasiparticles in the one dimensional Mott insulator ET-F2TCNQ are measured as a function of external pressure, which is used to tune the electronic structure. By fitting the static optical properties…

We investigate changes in the optical conductivity of doped Mott insulators by tuning ultrashort pump pulses to target either the Drude or low-energy absorption regions. Using a hole-doped two-leg Hubbard ladder and a four-leg t-J ladders,…

强关联电子 · 物理学 2026-01-19 Sumal Chandra , Kazuya Shinjo , Shigetoshi Sota , Seiji Yunoki , Takami Tohyama
‹ 上一页 1 2 3 10 下一页 ›