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相关论文: Frenkel-like Wannier-Mott Excitons in Few-Layer Pb…

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Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are…

We propose a method for calculating exciton spectra and wavefunctions for model lattice Hamiltonians, based on real-space electron-hole propagators. We verify that our results agree with those of the continuum approximation in the limit of…

强关联电子 · 物理学 2026-03-19 Man-Yat Chu , Mona Berciu

We present a many-body theory for Frenkel excitons which takes into account their composite nature exactly. Our approach is based on four commutators similar to the ones we previously proposed for Wannier excitons. They allow us to…

介观与纳米尺度物理 · 物理学 2009-09-29 M. Combescot , W. V. Pogosov

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the…

材料科学 · 物理学 2009-11-11 B. Arnaud , S. Lebègue , P. Rabiller , M. Alouani

One-dimensional semiconductors are characterized by strongly bound excitons. Therefore, the Frenkel regime of excitons localized within a few unit cells is readily reached and traditional Wannier exciton models become inadequate. In the…

介观与纳米尺度物理 · 物理学 2026-01-15 Thomas Garm Pedersen

By using the composite many-body theory for Frenkel excitons we have recently developed, we here derive the ground state energy of $N$ Frenkel excitons in the Born approximation through the Hamiltonian mean value in a state made of $N$…

介观与纳米尺度物理 · 物理学 2009-03-27 W. V. Pogosov , M. Combescot

We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV…

介观与纳米尺度物理 · 物理学 2015-05-14 Bhavtosh Bansal , S. Godefroo , M. Hayne , G. Medeiros- Ribeiro , V. V. Moshchalkov

The two-state molecular orbital model of the one-dimensional phenyl-based semiconductors is applied to poly(p-phenylene vinylene). The energies of the low-lying excited states are calculated using the density matrix renormalization group…

凝聚态物理 · 物理学 2009-10-31 Mikhail Yu. Lavrentiev , William Barford , Simon J. Martin , Helen Daly , Robert J. Bursill

Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton…

We consider the pairing between conduction band electrons, and the valence band holes in the neutral bilayer-type structures. By employing the bilayer Hubbard model, we show the possibility of the inter-plane exciton formation in the system…

强关联电子 · 物理学 2016-08-08 V. Apinyan , T. K. Kopeć

Excitons with large binding energies $\sim$2-3 eV in CrX$_{3}$ are historically characterized as being localized (Frenkel) excitons that emerge from the atomic $d{-}d$ transitions between the Cr-3$d$-$t_{2g}$ and $e_{g}$ orbitals. The…

We propose a simple first-principles method to describe propagation of tightly bound excitons. By viewing the exciton as a composite object (an effective Frenkel exciton in Wannier orbitals), we define an exciton kinetic kernel to…

强关联电子 · 物理学 2013-10-10 Chi-Cheng Lee , Xiaoqian M. Chen , Yu Gan , Chen-Lin Yeh , H. C. Hsueh , Peter Abbamonte , Wei Ku

The strong Coulomb forces in monolayer transition metal dichalcogenides ensure that optical excitation of band electrons gives rise to Wannier-Mott excitonic states, each of which can be conceptualized as a composite of a Gaussian…

介观与纳米尺度物理 · 物理学 2019-10-16 Eric Chatterjee , Daniel B. S. Soh , Christopher Rogers , Dodd J. Gray , Hideo Mabuchi

The theoretical description and the properties of Frenkel excitons in non-covalently bonded molecular aggregates are reviewed from a multi-exciton perspective of dissipative quantum dynamics. First, the photophysical and quantum chemical…

化学物理 · 物理学 2012-04-23 Oliver Kühn , Stefan Lochbrunner

Frenkel excitons, the primary photoexcitations in organic semiconductors that are unequivocally responsible for the optical properties of this materials class, are predicted to form \emph{bound} exciton pairs, i.e., biexcitons. These are…

The electronic band structure of V$_2$O$_5$ is calculated using an all-electron quasiparticle self-consistent (QS) $GW$ method, including electron-hole ladder diagrams in the screening of $W$. The optical dielectric function calculated with…

材料科学 · 物理学 2024-07-31 Claudio Garcia , Santosh Kumar Radha , Swagata Acharya , Walter R. L. Lambrecht

By combining electron energy-loss spectroscopy and state-of-the-art computational methods, we were able to provide an extensive picture of the excitonic processes in $1T$-HfS$_2$. The results differ significantly from the properties of the…

介观与纳米尺度物理 · 物理学 2018-10-17 Carsten Habenicht , Lorenzo Sponza , Roman Schuster , Martin Knupfer , Bernd Büchner

The concept of an exciton as a quasiparticle that represents collective excited states was originally adapted from solid-state physics and has been successfully applied to molecular aggregates by relying on the well-established limits of…

化学物理 · 物理学 2026-01-01 Seogjoo J. Jang , Irene Burghardt , Chao-Ping Hsu , Christopher J. Bardeen

The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems. Mono- and…

介观与纳米尺度物理 · 物理学 2018-03-20 Guowei Zhang , Andrey Chaves , Shenyang Huang , Fanjie Wang , Qiaoxia Xing , Tony Low , Hugen Yan

We demonstrate the possibility of existence of indirect moving Wannier-Mott excitons in graphene. Electron-hole binding is conditioned by the trigonal warping of conic energy spectrum. The binding energies are found for the lowest exciton…

介观与纳米尺度物理 · 物理学 2013-07-24 M. M. Mahmoodian , M. V. Entin
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