相关论文: Boundary Conditions and Surface States Spectra in …

We report on microscopic tight-binding modeling of surface states in Bi$_2$Se$_3$ three-dimensional topological insulator, based on a sp$^3$ Slater-Koster Hamiltonian, with parameters calculated from density functional theory. The effect of…

We discuss the relation between bulk topological invariants and the spectrum of surface states in three dimensional non-interacting topological insulators. By studying particular models, and considering general boundary conditions for the…

We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological…

Detailed study of the LDOS associated with the surface-state-band near a step-edge of the strong topological-insulator Bi2Te3, reveal a one-dimensional bound state that runs parallel to the stepedge and is bound to it at some characteristic…

We put forward a tight-binding model for rhombohedral topological insulators materials with the space group $D^{5}_{3d}(R\bar{3}m)$. The model describes the bulk band structure of these materials over the whole Brillouin zone. Within this…

We performed group theoretical investigation of symmetries of excitations in topological insulators \ce{Bi2Sb3}, \ce{Bi2Te3}, \ce{Bi2Se3} and \ce{Sb2Te3}, focusing on selection rules for optical processes. Electronic transitions of bulk…

A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a…

Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

In 2D topological insulators (TIs) based on semiconductor quantum wells such as HgTe/CdTe or InAs/GaSb/AlSb, spin polarized edge states have been predicted with a massless Dirac like dispersion. In a hard wall treatment based on the 4 x 4…

Recently, higher-order topological insulators have been attracting extensive interest. Unlike the conventional topological insulators that demand bulk gap closings at transition points, the higher-order band topology can be changed without…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission…

We derive a model of localized edge states in the finite width strip for two-dimensional electron gas formed in the hybrid system of bismuth monolayer deposited on the silicon interface and described by the nearly-free electron model with…

We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM)…

The topological properties of the bulk band structure of a three-dimensional topological insulator (TI) manifest themselves in the form of metallic surface states. In this paper, we propose a probe which directly couples to an exotic…

In this paper, we propose a new type of bulk-boundary correspondence as a generic approach to theoretically and experimentally detect fragile topological states. When the fragile phase can be written as a difference of a trivial atomic…

We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…

We examine the properties of edge states in a two-dimensional topological insulator. Based on the Kane-Mele model, we derive two coupled equations for the energy and the effective width of edge states at a given momentum in a semi-infinite…

The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band…

Benalcazar-Bernevig-Hughes (BBH) models, defined on $D$-dimensional simple cubic lattice, are paradigmatic toy models for studying $D$-th order topology and corner-localized, mid-gap states. Under periodic boundary conditions, the Wilson…