相关论文: Charge Offset Stability in Si Single Electron Devi…

Standard power system models are parameter dependent differential-algebraic equation (DAE) type. Following a transient event, voltage collapse can occur as a bifurcation of the transient load flow solutions which is marked by the system…

Ga$_2$O$_3$ and (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design, such as band gap variation with alloy composition and band…

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…

Numerical modeling of correlated single-electron tunneling in uniform 2D arrays of small conducting islands separated by tunnel junctions shows the possiblility of soliton-antisoliton avalanches. Though the time duration of any avalanche,…

Electronic structure calculations for atomic wire of metals like Al, Ga and In are performed for a patterned dihydrogeneted Si(001):1 $\times$ 1 in search of structures with metallic behavior. The dihydrogeneted Si(001) is patterned by…

Recent studies of FeSi$_{(1-x)}$Ge$_x$, which found a transition from an insulating to a magnetic metallic state near $x$=0.25, have revived the discussion about the role of strong correlation in these systems. Here are spin polarized band…

We present a compact atomic clock interrogating ultracold 87Rb magnetically trapped on an atom chip. Very long coherence times sustained by spin self-rephasing allow us to interrogate the atomic transition with 85% contrast at 5 s Ramsey…

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…

Gate oxide degradation is more critical in Silicon-Carbide (SiC) MOSFETs than in Silicon (Si) MOSFETs. This is because of the smaller gate oxide thickness and the higher electric field that develops across the gate oxide in SiC MOSFETs.…

We predict and analyze mechanical instability and corresponding self-sustained mechanical oscillations occurring in a nanoelectromechanical system composed of a metallic carbon nanotube (CNT) suspended between two superconducting leads and…

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f &#947; power spectrum noise with 1< &#947; <1.2. We…

Interfacial deposition stability between Li metal and a solid electrolyte (SE) is important in preventing interfacial contact loss, mechanical fracture, and dendrite growth in Li-metal solid-state batteries (SSB). In this work, we…

Previous band structure calculations predicted Ag3AuSe2 to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag3AuSe2 and its transport and optical properties. Single crystals of Ag3AuSe2…

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…

We report a complete analytical expression for the one-loop correction to the ac conductivity $\sigma(\omega)$ of a disordered two-dimensional electron system in the diffusive regime. The obtained expression includes the weak localization…

This paper studies the impacts of stochastic load fluctuations, namely the fluctuation intensity and the changing speed of load power, on the size of the voltage stability margin. To this end, Stochastic Differential-Algebraic Equations…

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically…

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…

We report on a systematic study of the thermodynamic, electronic and charge transport properties of high-quality single crystals of BaNiS$_2$, the metallic end-member of the quasi-twodimensional BaCo$_{1-x}$Ni$_x$S$_2$ system characterized…