相关论文: Transient lateral photovoltaic effect in patterned…
We investigate the influence of an external magnetic field on the magnitude and dephasing of the transient lateral photovoltaic effect (T-LPE) in lithographically patterned Co lines of widths of a few microns grown over naturally passivated…
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…
We demonstrate that the shift of the stop band position with increasing oblique angle in periodic structures results in a wide transverse exponential field distribution corresponding to strong angular confinement of the radiation. The beam…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
Photovoltaic (PV) response of epitaxial BiFe0.95Mn0.05O3 thin film grown by pulsed laser deposition has been investigated on a broad range of temperature. Wavelength dependent photovoltaic effect shows the contribution of in gap level…
Time-dependent current of the electrons excited in the conduction band after ultrafast interband photogeneration is studied theoretically. The transient photocurrent is calculated for the nonlinear regime of response to a stationary…
In this work, we approximate the surface photovoltage (SPV) transients in nm-sized ZnO films by the equivalent RC circuit model. The SPV rises in time in time for about 90 mcs after the exciting light pulse at 275 nm is off at different…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
We calculate transmission coefficient, $\mathcal T,$ of terahertz radiation through lateral plasmonic superlattice with a unit cell consisting of two regions with different plasma wave velocities, $s_1$ and $s_2$ ($s_1 > s_2$). We…
Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect…
The characteristics of mid-infrared laser diodes have been investigated before and after the patterning of sub-wavelength metallic apertures on the emitting facet. Before modification of the facet the emitted spectrum consisted of a large…
The effect of green and ultraviolet laser light on Ba$_{0.8}$Sr$_{0.2}$TiO$_3$/LaMnO$_3$ heterostructure electrical resistance was studied. In 80-200 K range illumination induces transient resistance component at ~15% of the steady-state…
The formation of permanent laser-induced periodic surface structures (LIPSS) on solid surfaces under impulsive laser irradiation above the damage threshold has been subject of extensive research. We demonstrate the formation of transient…
In this work, we systematically investigated the ultrafast optical properties of aluminum (Al) thin films on silicon cantilevers using a microscopic femtosecond optical pump-probe technique to explore the effect of light irradiation upon…
We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases,…
Focused laser fields with textured polarization on a sub-wavelength scale allow extracting information on electronic processes which are not directly accessible by homogeneous fields. Here, we consider photoionization in radially and…
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…
A novel proton imaging technique was applied which allows a continuous temporal record of electric fields within a time window of several nanoseconds. This "proton streak deflectometry" was used to investigate transient electric fields of…
In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a…