相关论文: Engineering Schottky Barrier in Black Phosphorus f…
The origin of the phonon thermal Hall effect in insulators is a matter of ongoing debate. The large amplitude of the signal in an elemental non-magnetic solid, such as black phosphorus (BP), calls for a minimal mechanism not invoking the…
We present a Solid-State Optical Magnetometer (SOM) based on black phosphorus (BP) multilayers, offering a compact, scalable, and highly sensitive alternative to traditional atomic-based magnetometers. Utilizing BP's intrinsic linear…
Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before…
Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from…
By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge…
We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of…
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an…
Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electronic structures, however, the direct and controllable growth…
Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of…
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights…
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
Two-dimensional black phosphorus has been configured as field-effect transistors, showing an intrinsic symmetric ambipolar transport characteristic. Here, we demonstrate the strongly modulated ambipolar characteristics of few-layer black…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their…
Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also…
Black phosphorus (BP) as a promising two-dimensional material with extraordinary optical properties constitutes an excellent building block in multilayer hyperbolic metamaterials. In this work, we design a multilayer structure composed of…
Deepening the understanding of interface-type Resistive Switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of…
Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such…
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our…