相关论文: Landau level spin diode in a GaAs two dimensional …

We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels…

By applying a magnetic field perpendicular to GaAs/AlGaAs two-dimensional electron systems, we study the low-field Landau quantization when the thermal damping is reduced with decreasing the temperature. Magneto-oscillations following…

We investigate a gapped two-dimensional nodal-line semimetal subjected to a perpendicular magnetic field. We identify an unusual pattern for Landau levels, where the energy of Landau levels first decreases and then starts increasing versus…

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…

We demonstrate the emergence of novel topological phases in quantum Hall-superconductor hybrid systems driven by Landau level mixing and spin-orbit interactions. Focusing on a narrow superconducting stripe atop a two-dimensional electron…

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented…

MnAu$_{2}$ is a spin-spiral material with in-plane ferromagnetic Mn layers that form a screw-type pattern around a tetragonal $c$ axis. The spiral angle $\theta$ was shown using neutron diffraction experiments to decrease with pressure, and…

GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…

We present a flexible scheme to realize exact flat Landau levels on curved spherical geometry in a system of spinful cold atoms. This is achieved by Floquet engineering of a magnetic quadrupole field. We show that a synthetic monopole field…

Magnetic states of the electron gas confined in modulation-doped core-shell nanowires are calculated for a transverse field of arbitrary strength and orientation. Magneto-conductance is predicted within the Landauer approach. The modeling…

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…

We consider, in the framework of the central spin $s=1/2$ model, driven dynamics of two electrons in a double quantum dot subject to hyperfine interaction with nuclear spins and spin-orbit coupling. The nuclear subsystem dynamically evolves…

We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…

Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and…

Enhancement of the electron spin polarization in a correlated two-layer two-dimensional electron system at a total Landau level filling factor of one is reported. Using resistively detected nuclear magnetic resonance, we demonstrate that…

The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled…

Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the…