相关论文: Landau level spin diode in a GaAs two dimensional …

We present observations of an anisotropic resistance state at Landau level filling factor $\nu=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field…

We study the magnetic-field dependence of Landau levels in graphene proximitized by large spin-orbit coupling materials, such as transition-metal dichalcogenides or topological insulators. In addition to the Rashba coupling, two types of…

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…

We demonstrate a way to polarize and detect nuclear spin in a gate-defined quantum point contact operating at high Landau levels. Resistively-detected Nuclear Magnetic Resonance (RDNMR) can be achieved up to the $5$th Landau level and at a…

We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the…

Non-equilibrium dynamics of strongly correlated systems constitutes a fascinating problem of condensed matter physics with many open questions. Here we investigate the relaxation dynamics of Landau-quantized electron system into spin-valley…

Time-resolved optical measurements of electron spin dynamics in modulation doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out of plane magnetic field…

Spin-flip rates in GaAs quantum dots can be quite slow, thus opening up the possibilities to manipulate spin states in the dots. We present here estimations of inelastic spin-flip rates mediated by hyperfine interaction with nuclei. Under…

We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown…

We investigate the dynamic polarization of nuclear spins in a nominally undoped GaAs/Al$_{0.35}$Ga$_{0.65}$As quantum well using two complementary experimental approaches: time-resolved Kerr rotation and optical orientation measurements of…

Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…

We study the low-energy edge states of a superconductor -- 3D topological-insulator hybrid structure (NS junction) in the presence of a perpendicular magnetic field. The hybridization of electron-like and hole-like Landau levels due to…

We show that a spin-polarized Landau level in a two-dimensional electron gas can carry a spin-triplet supercurrent between two spin-singlet superconductors. The supercurrent results from the interplay of Andreev reflection and Rashba…

We investigate novel Landau level structures of semi-metals with nodal ring dispersions. When the magnetic field is applied parallel to the plane in which the ring lies, there exist almost non-dispersive Landau levels at the Fermi level…

Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system…

Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron…

We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay…

We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass…

Nuclear spins are an important source of dephasing for electron spin qubits in GaAs quantum dots. Most studies of their dynamics have focused on the relatively slow longitudinal polarization. We show, based on a semiclassical model and…