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Bi$_2$Te$_3$ is a topological insulator whose unique properties result from topological surface states in the band gap. The neutralization of scattered low energy Na$^+$, which is sensitive to dipoles that induce inhomogeneities in the…

介观与纳米尺度物理 · 物理学 2018-02-14 Weimin Zhou , Haoshan Zhu , Jory A. Yarmoff

The possibility of electron beam guiding is theoretically explored on the surface of a topological insulator through the proximity interaction with a magnetic material. The electronic band modification induced by the exchange coupling at…

介观与纳米尺度物理 · 物理学 2015-06-17 Xiaodong Li , Ki Wook Kim

With the example of LaInO$_{3}$/BaSnO$_3$, we demonstrate how both density and distribution of a two-dimensional electron gas (2DEG) formed at the interface between these perovskite oxides, can be efficiently controlled by a ferroelectric…

材料科学 · 物理学 2022-01-17 Le Fang , Wahib Aggoune , Wei Ren , Claudia Draxl

Two-dimensional topological insulators possess conducting edge states at their boundary while being insulating in the bulk. The detection of edge states remains an open question in ultracold atom setups. We propose a configuration to…

量子气体 · 物理学 2020-06-30 Bernhard Irsigler , Jun-Hui Zheng , Walter Hofstetter

The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…

介观与纳米尺度物理 · 物理学 2021-01-14 M. M. Mahmoodian , M. V. Entin

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized…

介观与纳米尺度物理 · 物理学 2015-03-03 Fucong Fei , Qianjin Wang , Zhongxia Wei , Rui Wang , Danfeng Pan , Bo Zhao , Xuefeng Wang , Xinran Wang , Fengqi Song , Baigeng Wang , Jianguo Wan , Guanghou Wang

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…

The synergistic formation of ``zero'' (exponentially small or thermally activated) resistance states (ESRS) in high mobility two-dimensional electron systems (2DES) in a static magnetic field B and exposed to strong microwave radiation has…

介观与纳米尺度物理 · 物理学 2007-05-23 J. C. Phillips

In the past two decades, various classes of topological materials have been discovered, spanning topological insulators, semimetals, and metals. While the observation and understanding of the topology of a material has been a primary focus…

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

Topological insulators and semimetals as well as unconventional iron-based superconductors have attracted major recent attention in condensed matter physics. Previously, however, little overlap has been identified between these two vibrant…

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe…

Spinodal decomposition is proposed for stabilizing self-assembled interfaces between topological insulators (TIs) by combining layers of iso-structural and iso-valent TlBi$X_2$ ($X$=S, Se, Te) materials. The composition range for gapless…

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

材料科学 · 物理学 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…

材料科学 · 物理学 2014-10-21 Matthew Brahlek , Nikesh Koirala , Maryam Salehi , Namrata Bansal , Seongshik Oh

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct…

A topological insulator Bi2Se3 which shows superconducting property due to Cu doping has been studied using high resolution transmission electron microscopy which provides for the first time, the direct evidence of intercalation sites. A…

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the…

强关联电子 · 物理学 2007-05-23 V. Koerting , Qingshan Yuan , P. J. Hirschfeld , T. Kopp , J. Mannhart

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic…

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