相关论文: High-performance bilayer metal-oxide thin film tra…
Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium…
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…
Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs)…
We report thickness dependent metal insulator transition in Ga doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film exhibits a resistivity…
This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$,…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a…
Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made…
Freestanding GdBa2Cu3O7 (GdBCO) superconducting thin films were fabricated using a water-soluble Sr3Al2O6 (SAO) sacrificial layer in combination with thermal release tape. An amorphous Al2O3 capping layer was introduced to suppress crack…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…
Temperature dependent impedance spectroscopy enables the many contributions to the dielectric and resistive properties of condensed matter to be deconvoluted and characterized separately. We have achieved this for multiferroic epitaxial…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap…
Scalable, high-speed, small-footprint photonic switching platforms are essential for advancing optical communication. An effective optical switch must operate at high duty cycles with fast recovery times, while maintaining substantial…
Metal oxide thin films are of great interest in scientific advancement, particularly semiconductor thin films in transistors and in a wide range of optoelectronic applications. Many metal oxide thin films attract interest for their…
Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…