相关论文: Carrier-carrier scattering and negative dynamic co…

Polarization characteristic of ultrafast carrier dynamics in multi-layer CVD-grown graphene is probed with tilted beams (with respected to the graphene plane). The graphene ultrafast carrier dynamics measurement greatly depends on both…

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising…

The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in…

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric…

We calculate the finite-frequency conductivity of bilayer graphene with a relative twist between the layers. The low frequency response at zero doping shows a flat conductivity with value twice that of the monolayer case and at higher…

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair…

We present a theory of electronic transport in graphene in the presence of randomly placed adsorbates. Our analysis predicts a marked asymmetry of the conductivity about the Dirac point, as well as a negative weak-localization…

We experimentally investigate electrical transport properties of graphene, which is a two dimensional (2D) conductor with relativistic energy dispersion relation. By investigating single- and bi-layer graphene devices with different aspect…

The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at…

Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes…

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…

We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and…

Reflectance and transmittance of graphene in the optical region are analyzed as a function of frequency, temperature, and carrier density. We show that the optical graphene properties are determined by the direct interband electron…

The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a…

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…