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We propose a unified description of transport in graphene with adsorbates that fully takes into account localization effects and loss of electronic coherence due to inelastic processes. We focus in particular on the role of the scattering…

介观与纳米尺度物理 · 物理学 2013-11-28 Guy Trambly De Laissardière , Didier Mayou

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

介观与纳米尺度物理 · 物理学 2015-05-30 X. Li , K. M. Borysenko , M. Buongiorno Nardelli , K. W. Kim

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a…

We have measured the impact of calcium adsorbates on the transport property of graphene. Although calcium renders conductivity linearly dependent on the carrier density of graphene as predicted, our experimental results diverge from the…

介观与纳米尺度物理 · 物理学 2016-07-15 Jyoti Katoch , Masa Ishigami

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari

In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from…

材料科学 · 物理学 2009-11-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements,…

介观与纳米尺度物理 · 物理学 2021-11-17 Fumiya Mukai , Kota Horii , Nazuna Hata , Ryoya Ebisuoka , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic…

介观与纳米尺度物理 · 物理学 2017-12-20 Pawan Kumar Srivastava , Swasti Arya , Santosh Kumar , Subhasis Ghosh

A degenerate pump--probe technique is used to investigate the non equilibrium carrier dynamics in multi--layer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation ($\sim 50$ fs) of the…

介观与纳米尺度物理 · 物理学 2015-05-13 P. Plochocka , P. Kossacki , A. Golnik , T. Kazimierczuk , C. Berger , W. A. de Heer , M. Potemski

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

介观与纳米尺度物理 · 物理学 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

We study hot carrier transport under magnetic fields up to 15 T in suspended graphitic multilayers through differential conductance (dI/dV) spectroscopy. Distinct high-energy dI/dV anomalies have been observed and shown to be related to…

介观与纳米尺度物理 · 物理学 2011-09-05 Carlos Diaz Pinto , Sungbae Lee , Viktor G. Hadjiev , Haibing Peng

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at…

We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical…

介观与纳米尺度物理 · 物理学 2015-06-16 J. F. Sierra , I. Neumann , M. V. Costache , S. O. Valenzuela

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo

The chapter generalizes results on influence of uniaxial strain and adsorption on the electron states and charge transport or localization in graphene with different configurations of imperfections (point defects): resonant (neutral)…

We study optical absorption at graphene edges in a transversal magnetic field. The magnetic field bends the trajectories of particle- and hole excitations into antipodal direction which generates a directed current. We find a rather strong…

介观与纳米尺度物理 · 物理学 2021-08-02 Friedemann Queisser , Sascha Lang , Ralf Schützhold

While the Dirac band structure of graphene has established it as a leading platform for ultrafast optoelectronics, its non-perturbative nonlinear response under intense excitation remains poorly understood. Here, we report ultrafast…

光学 · 物理学 2026-04-27 Xiaolong Lv , Yu Zhang , Yuxuan Wei , Chuanshan Tian

A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy…

We investigate the dependence of the electrical resistivity of $\sim 60 $nm thick single crystalline graphite samples on the defect concentration produced by proton irradiation at very low fluences. We show that the resistivity decreases…

材料科学 · 物理学 2009-11-03 A. Arndt , D. Spoddig , P. Esquinazi , J. Barzola-Quiquia , T. Butz