相关论文: Negative-U properties for substitutional Au in Si
The first direct experimental observation of an electric quadrupole ($\textit{E}$2) transition between bound states of an atomic negative ion has been made. The transition was observed in the negative ion of bismuth by resonant (1+1)…
A robust nanoelectromechanical switch is proposed based upon an asymmetric pendant moiety anchored to an organic backbone between two C60 fullerenes, which in turn are connected to gold electrodes. Ab initio density functional calculations…
The self-interaction corrected density-functional calculations are performed for Re impurities and their pairs in silicon. Rhenium ions form in the host crystal not very tight pairs, with impurities separated by one Si atom or by a distance…
We consider periodic homogenization with localized defects of boundary value problems for semilinear ODE systems of the type $$ \Big((A(x/\varepsilon)+B(x/\varepsilon))u'(x)+c(x,u(x))\Big)'= d(x,u(x)) \mbox{ for } x \in (0,1),\;…
We extend the Composite Boson theory to study slightly im-balanced bi-layer Quantum Hall systems. In the global $ U(1) $ symmetry breaking excitonic superfluid side, as the imbalance increases, the system supports continuously changing…
We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also…
Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of…
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical…
We report electronic structure calculations of an iron impurity in gold host. The spin, orbital and dipole magnetic moments were investigated using the LDA+$U$ correlated band theory. We show that the {\em around-mean-field}-LDA+$U$…
This study presents a comparative numerical analysis of Gold (Au) and high-index semiconductor nanoparticles for refractive index sensing in the visible range. While Au nanoparticles demonstrate high sensitivity ($\approx 150$ nm per…
The structural and electronic properties of amorphous silicon ($a$-Si) are investigated by first-principles calculations based on the density-functional theory (DFT), focusing on the intrinsic structural defects. By simulated melting and…
The spectroscopic characteristics of systems with adsorbed d impurities on noble metal surfaces should depend on the number and geometric arrangement of the adsorbed atoms and also on their d band filling. Recent experiments using scanning…
We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the…
We use recent theoretical advances to develop a new functional form for interatomic forces in bulk silicon. The theoretical results underlying the model include a novel analysis of elastic properties for the diamond and graphitic structures…
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G…
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy…
To explain the effect of electron density saturation at high phosphorus concentrations the model of negatively charged phosphorus clusters was compared with the experimental data. A number of negatively charged clusters incorporating a…
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT)…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
Dynamical decoupling multipulse sequences can be applied to solid state spins for sensing weak oscillating fields from nearby single nuclear spins. By periodically reversing the probing system's evolution, other noises are counteracted and…