相关论文: The Valley Hall Effect in MoS2 Transistors
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
Orbitronics, which leverages the angular momentum of atomic orbitals for information transmission, provides a novel strategy to overcome the limitations of electronic devices. Unlike electron spin, orbital angular momentum (OAM) is strongly…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
The topological Hall effect (THE) has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. THE has been considered an experimental signature of the topological…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric…
In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional…
Moir\'e superlattices created by stacking atomic layers of transition metal dichalcogenide semiconductors have emerged as a class of fascinating artificial photonic and electronic materials. An appealing attribute of these structures is the…
Transition metal dichalcogenides have a rich exciton landscape consisting of a variety of bright and dark excitonic states. We consider the lowest-energy dark states in $\hbox{MoS}_2$, which can be referred to as hybrid excitons, as they…
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the…
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization mainly focuses on two major types of systems. One type…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
We study perfect valley polarization in a molybdenum disulfide MoS2 nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS2 monolayer…
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…
Hall effect of topological quantum materials often reveals essential new physics and possesses potential for application. Magnetic Weyl semimetal is one especially interesting example that hosts an interplay between the spontaneous…
Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or…
Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier…
Layered semiconductors, such as MoS2, have attracted interest as channel materials for post-silicon and beyond-CMOS electronics. Much attention has been devoted to the monolayer limit, but the monolayer channel is not necessarily…