相关论文: The Valley Hall Effect in MoS2 Transistors
A comprehensive study of magnetoresistance and Hall effect has been performed for the set of the single crystals of non-magnetic metal LuB12 with the Jahn-Teller instability of the boron cage and dynamic charge stripes forming along <110>…
Valley polarization (VP), an induced imbalance in the populations of a multi-valley electronic system, allows emission of second harmonic (SH) light even in centrosymmetric crystals such as graphene. Whereas in systems such as…
We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…
The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means.…
Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising…
Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe$_2$ transistors, however, it is shown to carry a nonlinear transport signature of…
We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum that lead to unusual effective behavior of the classical Hall effect. Using an anisotropic structure,…
We study the tunable quantum Hall effects in a non-Abelian honeycomb optical lattice which is a many-Dirac-points system. We find that the quantum Hall effects present different features as change as relative strengths of several…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show…
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…
In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…
Magnonic excitations in the two-dimensional (2D) van der Waals (vdW) ferromagnet CrI3 are studied. We find that bulk magnons exhibit a non-trivial topological band structure without the need for Dzyaloshinskii-Moriya (DM) interaction. This…
2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…
The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals…
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…