相关论文: Magnetoresistance of double layer hybrid system in…
Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the…
Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride…
Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack of weakly coupled multilayer graphene as grown by chemical vapor deposition (CVD). This effect has been characterized as a function of temperature and tilt angle of…
We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at…
A doped graphene layer in the integer quantum Hall regime reveals a highly unusual particle-hole excitation spectrum, which is calculated from the dynamical polarizability in the random phase approximation. We find that the elementary…
We argue, for a wide class of systems including graphene, that in the low temperature, high density, large separation and strong screening limits the drag resistivity behaves as d^{-4}, where d is the separation between the two layers. The…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
We present a theoretical study of magnetocapacitance in a graphene monolayer at finite temperature taking into account the effects of disorder. The density of states (DOS) and magnetocapacitance found for graphene are compared to those…
We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
The electromagnetic response of graphene in a magnetic field is studied, with particular emphasis on the quantum features of its ground state (vacuum). The graphene vacuum, unlike in conventional quantum Hall systems, is a dielectric medium…
We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…
We show that the type of charge carrier scattering significantly affects the high-field magnetoresistance of graphene nanoribbons. This effect has potential to be used in identifying the scattering mechanisms in graphene. The results also…
We derive an analytic expression for the geometric Hall viscosity of non-interacting electrons in a single graphene layer in the presence of a perpendicular magnetic field. We show that a recently-derived formula in [C. Hoyos and D. T. Son,…
We calculate the classic Hall conductivity and mobility of the undoped and doped (or in the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons…
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel…
We investigate the emerging consequences of an applied strong in-plane electric field on a macroscopically large graphene sheet subjected to a perpendicular magnetic field, by determining in exact analytical form various many-body…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…