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相关论文: Size confinement effect in graphene grown on 6H-Si…

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We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in…

介观与纳米尺度物理 · 物理学 2018-02-09 Sergey Slizovskiy , Vladimir I. Fal'ko

Free electron like image potential states are observed in scanning tunneling spectroscopy on graphene quantum dots on Ir(111) acting as potential wells. The spectrum strongly depends on the size of the nanostructure as well as on the…

介观与纳米尺度物理 · 物理学 2015-03-13 Fabian Craes , Sven Runte , Jürgen Klinkhammer , Marko Kralj , Thomas Michely , Carsten Busse

A planar quantum-well device made of a gapless graphene nanoribbon with edges in contact with gapped graphene sheets is examined. The size-quantization spectrum of charge carriers in an asymmetric quantum well is shown to exhibit a…

介观与纳米尺度物理 · 物理学 2012-08-08 P. V. Ratnikov , A. P. Silin

Despite the enormous interest in the properties of graphene and the potential of graphene nanostructures in electronic applications, the study of quantum confined states in atomically well-defined graphene nanostructures remains an…

We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in…

介观与纳米尺度物理 · 物理学 2010-07-28 L. Zhang , J. Camacho , H. Cao , Y. P. Chen , M. Khodas , D. Kharzeev , A. Tsvelik , T. Valla , I. A. Zaliznyak

Laterally localized electronic states are identified on a single layer of graphene on ruthenium. The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a quantum dot array, evidenced by…

材料科学 · 物理学 2010-07-08 H. G. Zhang , H. Hu , Y. Pan , J. H. Mao , M. Gao , H. M. Guo , S. X. Du , T. Greber , H. -J. Gao

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…

介观与纳米尺度物理 · 物理学 2015-05-30 Tian Shen , Wei Wu , Qingkai Yu , Curt A Richter , Randolph Elmquist , David Newell , Yong P. Chen

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling…

介观与纳米尺度物理 · 物理学 2020-09-14 M. Schmitz , T. Ouaj , Z. Winter , K. Rubi , K. Watanabe , T. Taniguchi , U. Zeitler , B. Beschoten , C. Stampfer

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic…

介观与纳米尺度物理 · 物理学 2012-02-23 N. Jakse , R. Arifin , S. K. Lai

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents…

Evidence for developing fractional quantum Hall effect (FQHE) at filling fraction $\nu{=}1/6$ and $1/8$ has recently been reported in wide GaAs quantum wells [Wang \emph{et al.}, PRL {\bf 134}, 046502 (2025)]. In this article, we…

强关联电子 · 物理学 2025-07-09 Ajit C. Balram , Anirban Sharma , J. K. Jain

Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum…

介观与纳米尺度物理 · 物理学 2015-05-14 T. Shen , J. J. Gu , M. Xu , Y. Q. Wu , M. L. Bolen , M. A. Capano , L. W. Engel , P. D. Ye

The electronic states of a finite-width graphene sheet in the presence of an electrostatic confining potential and a perpendicular magnetic field are investigated. The confining potential shifts the Landau levels inside the well and creates…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Milton Pereira , F. M. Peeters , P. Vasilopoulos

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the…

介观与纳米尺度物理 · 物理学 2015-05-18 J. Cervenka , K. van de Ruit , C. F. J. Flipse

We consider the energy spectrum of the planar quantum well which consisted of two ribbons of narrow-gap semiconductors and a graphene ribbon between ones. It is shown that the gapless mode appears only in case of inverted narrow-gap…

其他凝聚态物理 · 物理学 2015-05-13 P. V. Ratnikov , A. P. Silin

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids…

介观与纳米尺度物理 · 物理学 2015-05-14 Kirill I. Bolotin , Fereshte Ghahari , Michael D. Shulman , Horst L. Stormer , Philip Kim

We report the existence of confined massless fermion states in a graphene quantum well (QW) by means of analytical and numerical calculations. These states show an unusual quasi-linear dependence on the momentum parallel to the QW: their…

材料科学 · 物理学 2007-05-23 J. Milton Pereira , V. Mlinar , F. M. Peeters , P. Vasilopoulos

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…

介观与纳米尺度物理 · 物理学 2013-12-24 J. Shabani , Y. Liu , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

Quantum well states appear in metallic thin films due to the confinement of the wave function by the film interfaces. Using angle-resolved photoemission spectroscopy, we unexpectedly observe quantum well states in fractured single crystals…

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