相关论文: Size confinement effect in graphene grown on 6H-Si…

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…

We studied the effect of quantum confinement on the size of the band gap in single layer epitaxial graphene. Samples with different graphene terrace sizes are studied by using low energy electron microscopy (LEEM) and angle-resolved…

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…

We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…

Many recent calculations have been performed to study a Co atom adsorbed on graphene, with significantly varying results on the nature of the bonding. We use auxiliary-field quantum Monte Carlo (AFQMC) and a size-correction embedding scheme…

Confining Dirac fermions in graphene by electrostatic fields is a challenging task. Electric quantum dots created by a scanning tunneling microscope (STM) tip can trap zero-energy quasi-particles. The Lorentzian quantum well provides a…

The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…

Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…

Bilayer graphene samples may exhibit regions where the two layers are locally delaminated forming a so-called quantum blister in the graphene sheet. Electron and hole states can be confined in this graphene quantum blisters (GQB) by…

We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene…

Graphene is a nonmagnetic semimetal and cannot be directly used as electronic or spintronic devices. We demonstrate that graphene quantum dots (GQDs) can exhibit strong edge magnetism and tunable energy gaps due to the presence of localized…

We study an interaction of 2D quasiparticles with linear dispersion (graphene) with impurity potentials. It is shown that in 1D potential well (quantum wire) there are discrete levels, corresponding to localized states, whereas in 2D well…

We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…

The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These…

Electrons can form a two-dimensional electron gas at metal surfaces, where lateral confinement leads to quantum-well states. Such states have been observed for highly itinerant electrons, but it remains an open question whether quantum-well…

The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH…

We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…