相关论文: Energy-efficient magnetoelastic non-volatile memor…

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…

Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

We present an algorithm to store binary memories in a Hopfield neural network using minimum probability flow, a recent technique to fit parameters in energy-based probabilistic models. In the case of memories without noise, our algorithm…

The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…

Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic…

The integration of single-atom bits enables the realization of the highest data-density memory. Reading and writing information to these bits through mechanical interactions opens the possibility of operating the magnetic devices with low…

A solution to energy-efficient magnetization switching in a nanoparticle with biaxial anisotropy is presented. Optimal control paths minimizing the energy cost of magnetization reversal are calculated numerically as functions of the…

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…

It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…

This paper reports on a theoretical proposal for electrical creation of magnetic skyrmions on a thin-film specimen of a multiferroic chiral magnet by local application of an electric field, instead of an electric current, via an electrode…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Strain-mediated multiferroic composites, i.e., piezoelectric-magnetostrictive heterostructures, hold profound promise for energy-efficient computing in beyond Moore's law era. While reading a bit of information stored in the…